Spin-orbit torque (SOT) induced by electric current has attracted extensive attention as an efficient method of controlling the magnetization in nanomagnetic structures. SOT-induced magnetization reversal is usually achieved with the aid of an in-plane bias magnetic field. In this paper, we show that by selecting a film stack with weak out-of-plane magnetic anisotropy, field-free SOT-induced switching can be achieved in micron sized multilayers. Using direct current, deterministic bipolar magnetization reversal is obtained in Pt/[Co/Ni]2/Co/Ta structures. Kerr imaging reveals that the SOT-induced magnetization switching process is completed via the nucleation of reverse domain and propagation of domain wall in the system
Spintronic devices provide an energy-efficient platform for implementing non-volatile memory and log...
In this work, we show that domain wall (DW) dynamics within a system provide an alternative platform...
Spin–orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices have been proposed for ...
Spin-orbit torque (SOT) induced by electric current has attracted extensive attention as an efficien...
A magnetic field free current-induced deterministic switching is demonstrated in a perpendicularly m...
Current-induced magnetization reversal due to spin-orbit torque is demonstrated in an anisotropy con...
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of wr...
Leveraging on interfacial Dzyaloshinskii-Moriya interaction (DMI) induced intrinsic magnetization ti...
We investigate and quantify spin-orbit torque (SOT) strength by current induced effective in-plane m...
Application of sufficient lateral current to a heavy metal (HM) can switch the perpendicular magneti...
Asymmetric magnetization reversal in perpendicularly exchange biased Pt/Co/Pt/IrMn multilayers was s...
Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure ...
We experimentally determine that a Pt layer insertion between the Co/Ta interface can effectively ne...
Current-induced spin-orbit torque (SOT) effects are usually attributed to spin Hall effect (SHE) occ...
Today's society relies on efficient ways to write and read digital information due to the ever incre...
Spintronic devices provide an energy-efficient platform for implementing non-volatile memory and log...
In this work, we show that domain wall (DW) dynamics within a system provide an alternative platform...
Spin–orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices have been proposed for ...
Spin-orbit torque (SOT) induced by electric current has attracted extensive attention as an efficien...
A magnetic field free current-induced deterministic switching is demonstrated in a perpendicularly m...
Current-induced magnetization reversal due to spin-orbit torque is demonstrated in an anisotropy con...
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of wr...
Leveraging on interfacial Dzyaloshinskii-Moriya interaction (DMI) induced intrinsic magnetization ti...
We investigate and quantify spin-orbit torque (SOT) strength by current induced effective in-plane m...
Application of sufficient lateral current to a heavy metal (HM) can switch the perpendicular magneti...
Asymmetric magnetization reversal in perpendicularly exchange biased Pt/Co/Pt/IrMn multilayers was s...
Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure ...
We experimentally determine that a Pt layer insertion between the Co/Ta interface can effectively ne...
Current-induced spin-orbit torque (SOT) effects are usually attributed to spin Hall effect (SHE) occ...
Today's society relies on efficient ways to write and read digital information due to the ever incre...
Spintronic devices provide an energy-efficient platform for implementing non-volatile memory and log...
In this work, we show that domain wall (DW) dynamics within a system provide an alternative platform...
Spin–orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices have been proposed for ...