Add to ORKGPorous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in the past. However, these fabrication techniques require further post-growth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction
We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-dope...
Abstract : Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and se...
Utilising dislocation-related vertical etching channels in gallium nitride, we have previously demon...
Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extr...
Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extractio...
Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extractio...
Here we present the fabrication of LEDs based on porous GaN produced by chemical vapor deposition (C...
Producción CientíficaModern society is experiencing an ever-increasing demand for energy to power a ...
In this dissertation, GaN growth on porous templates by metalorganic chemical vapor deposition (MOCV...
LEDs with enhanced light extraction efficiency and sensors with improved sensitivity have been devel...
In this paper we report on a comparative study of electrochemical processes for the preparation of m...
Four types of GaN-based light-emitting diodes (LEDs) with V-pits formed in different regions were gr...
A physical vapor deposition (PVD) process for AlN nucleation layers has been developed to improve th...
Porous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- an...
We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-dope...
We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-dope...
Abstract : Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and se...
Utilising dislocation-related vertical etching channels in gallium nitride, we have previously demon...
Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extr...
Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extractio...
Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extractio...
Here we present the fabrication of LEDs based on porous GaN produced by chemical vapor deposition (C...
Producción CientíficaModern society is experiencing an ever-increasing demand for energy to power a ...
In this dissertation, GaN growth on porous templates by metalorganic chemical vapor deposition (MOCV...
LEDs with enhanced light extraction efficiency and sensors with improved sensitivity have been devel...
In this paper we report on a comparative study of electrochemical processes for the preparation of m...
Four types of GaN-based light-emitting diodes (LEDs) with V-pits formed in different regions were gr...
A physical vapor deposition (PVD) process for AlN nucleation layers has been developed to improve th...
Porous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- an...
We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-dope...
We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-dope...
Abstract : Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and se...
Utilising dislocation-related vertical etching channels in gallium nitride, we have previously demon...