InAs/GaAs Quantum Dot Lasers Monolithically Integrated on Group IV Platform

III-V quantum dot lasers monolithically integrated on silicon platform attracts intensive interests due to its advantages on providing a promising solution for reliable and efficient light source to integrated on photonics and electronics circuits. Compared to wafer bonding technique, monolithic integration its more attractive for large scale, low cost and streamline fabrication. In this paper, we give a brief review on our recent progress of III-V quantum dot lasers monolithically integrated on 4° offcut and exact (001) Si substrates for the silicon photonic integration