Multilevel information storage in ferroelectric polymer memories
- Tripathi, Ashutosh K.
- Van Breemen, Albert J.J.M.
- Shen, Jie
- Gao, Qi
- Ivan, Marius G.
- Reimann, Klaus
- Meinders, Erwin R.
- Gelinck, Gerwin H.
DOIAbstract
Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly-(vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin-film transistor memory is realized by implementing imprinted ferroelectric polymer films as the insulator and gate dielectric layers, respectively
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