Here we demonstrate that the 0-dimensional confinement of Ge2Sb2Te5 results in a drastic reduction of the minimum critical fluence required for optical-induced amorphization when compared to the thin-film cases. We show that by using single-shot laser pulses, the investigated nanoparticles display a crystalline-to-amorphous transition, satisfying a mandatory requirement of a bit-memory element. These unprecedented results open a viable route to boost energy efficient phase-change processes
Phase-change materials (PCMs) represent the leading candidates for universal data storage devices, w...
Chalcogenide-based nanostructured phase-change materials (PCMs) are considered promising building bl...
International audienceThe use of ultrafast laser pulses to initiate solid-state phase-transitions in...
Here we demonstrate that the 0-dimensional confinement of Ge2Sb2Te5 results in a drastic reduction o...
Here we demonstrate that the 0-dimensional confinement of Ge2Sb2Te5 results in a drastic reduction o...
We have observed an irreversible ultrafast crystalline-to-amorphous phase transition in Ge2Sb2Te5cha...
openElectronic memory and computing devices currently rules our digital lives, creating and consumin...
Although nanostructured phase-change materials (PCMs) are considered as the building blocks of next-...
We use ultrafast optics and electron diffraction to measure irreversible amorphization of crystallin...
Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as n...
The amorphous to crystalline phase transformation of Ge2Sb2Te5 (GST) films by UV nanosecond (ns) and...
Phase-change memory is a promising candidate for the next generation of non-volatile memory devices....
Phase change memory devices are based on the rapid and reversible amorphous to crystalline transfor...
Phase change memory, which is based on the reversible switching of phase change materials between am...
Phase-change materials are of immense importance for optical recording and computer memory, but the ...
Phase-change materials (PCMs) represent the leading candidates for universal data storage devices, w...
Chalcogenide-based nanostructured phase-change materials (PCMs) are considered promising building bl...
International audienceThe use of ultrafast laser pulses to initiate solid-state phase-transitions in...
Here we demonstrate that the 0-dimensional confinement of Ge2Sb2Te5 results in a drastic reduction o...
Here we demonstrate that the 0-dimensional confinement of Ge2Sb2Te5 results in a drastic reduction o...
We have observed an irreversible ultrafast crystalline-to-amorphous phase transition in Ge2Sb2Te5cha...
openElectronic memory and computing devices currently rules our digital lives, creating and consumin...
Although nanostructured phase-change materials (PCMs) are considered as the building blocks of next-...
We use ultrafast optics and electron diffraction to measure irreversible amorphization of crystallin...
Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as n...
The amorphous to crystalline phase transformation of Ge2Sb2Te5 (GST) films by UV nanosecond (ns) and...
Phase-change memory is a promising candidate for the next generation of non-volatile memory devices....
Phase change memory devices are based on the rapid and reversible amorphous to crystalline transfor...
Phase change memory, which is based on the reversible switching of phase change materials between am...
Phase-change materials are of immense importance for optical recording and computer memory, but the ...
Phase-change materials (PCMs) represent the leading candidates for universal data storage devices, w...
Chalcogenide-based nanostructured phase-change materials (PCMs) are considered promising building bl...
International audienceThe use of ultrafast laser pulses to initiate solid-state phase-transitions in...