Molecular dynamics simulation of the effects of the samples' temperature on Ar+ interactions with SiC surface

Molecular dynamics simulations were performed to investigate the effects of surface temperature on Ar+ interactions with the SiC surface. The simulation results show that the number of Si atoms removed increases with increasing surface temperature, while the number of C atoms removed slightly changes. The sputtering yield of Si atoms is greater than that of C atoms. It is found that most of Si and C atoms removed come from the surface region. After modified by Ar+ ions, a Si-rich amorphous layer is formed