High dynamic range pixel architecture with smart light intensity decision unit/

In this thesis, a novel pixel architecture for third generation infrared detectors is proposed. This smart design introduces flux detection mechanism for the broad spectrum short wave infrared detector and dual/multicolor detectors. This archi-tecture achieves very high dynamic range for analog ROICs. DR for ROIC means very dark and very bright signal levels is processed at the same time. In practical terms, HDR enables high contrast and accuracy which finds itself many applications from security to industry. The typical unit cell of a ROIC consists of the pre-amplifier, gain switches, multiplexer, output amplifier and some control switches. For a standard single band detector array, a ROIC uses only a single pre-amplifier which optimized for average performance. In the proposed architecture, instead of using a single preamplifier, two pre-amplifiers, which are optimized for different light levels, are placed inside each pixel. A smart circuit mechanism, which decides the best input circuit according to the incoming light level, is also designed for the pixel. In short, the smart pixel selects the best input amplifier circuit that performs the best SNR for the incoming signal level. A 32x32 prototype chip is designed in 0.18 µm CMOS technology. Chip achieves minimum 8.6 e− input referred noise and 98.9 dB dynamic range. Operating temperature is 300 K and power consumption is 2.8 µW per pixel