We show that edge-state transport in semiconductor-based quantum spin Hall systems is unexpectedly robust to magnetic fields. The origin for this robustness lies in an intrinsic suppression of the edge-state g-factor and the fact that the edge-state Dirac point is typically hidden in the valence band. A detailed k·p band-structure analysis reveals that both InAs/GaSb and HgTe/CdTe quantum wells exhibit such buried Dirac points for a wide range of well thicknesses. By simulating transport in a disordered system described within an effective model, we demonstrate that edge-state transport remains nearly quantized up to large magnetic fields, consistent with recent experiments.Quantum Computing DivisionQuTechQN/Theoretical PhysicsQRD/Wimmer La
International audienceWe propose a minimal effective two-dimensional Hamiltonian for HgTe/CdHgTe qua...
HgTe quantum wells (QWs) are two-dimensional semiconductor systems that change their properties at t...
HgTe quantum wells (QWs) are two-dimensional semiconductor systems that change their properties at t...
We show that edge-state transport in semiconductor-based quantum spin Hall systems is unexpectedly r...
We show that burying of the Dirac point in semiconductor-based quantum-spin-Hall systems can generat...
We show that edge-state transport in semiconductor-based quantum spin Hall systems is unexpectedly r...
The quantum spin Hall (QSH) state is a state of matter characterized by a non-trivial topology of it...
We report low-temperature transport measurements in strainedᅠInAs/Ga0.68In0.32Sbᅠquantum wells, whic...
We have engineered electron-hole bilayers of inverted InAs/GaSb quantum wells, using dilute silicon ...
The quantum Spin Hall Insulator (QSHI) is a two-dimensional variant of a novel class of materials ch...
The discovery of the quantum spin Hall (QSH) state, and topological insulators in general, has spark...
The transversal propagation of the edge states in a two-dimensional quantum spin Hall (QSH) system i...
Topological states of matter in two-dimensional systems are characterised by the different propertie...
The Quantum Spin Hall insulator is characterized by the presence of gapless helical edge states wher...
The Quantum Spin Hall insulator is characterized by the presence of gapless helical edge states wher...
International audienceWe propose a minimal effective two-dimensional Hamiltonian for HgTe/CdHgTe qua...
HgTe quantum wells (QWs) are two-dimensional semiconductor systems that change their properties at t...
HgTe quantum wells (QWs) are two-dimensional semiconductor systems that change their properties at t...
We show that edge-state transport in semiconductor-based quantum spin Hall systems is unexpectedly r...
We show that burying of the Dirac point in semiconductor-based quantum-spin-Hall systems can generat...
We show that edge-state transport in semiconductor-based quantum spin Hall systems is unexpectedly r...
The quantum spin Hall (QSH) state is a state of matter characterized by a non-trivial topology of it...
We report low-temperature transport measurements in strainedᅠInAs/Ga0.68In0.32Sbᅠquantum wells, whic...
We have engineered electron-hole bilayers of inverted InAs/GaSb quantum wells, using dilute silicon ...
The quantum Spin Hall Insulator (QSHI) is a two-dimensional variant of a novel class of materials ch...
The discovery of the quantum spin Hall (QSH) state, and topological insulators in general, has spark...
The transversal propagation of the edge states in a two-dimensional quantum spin Hall (QSH) system i...
Topological states of matter in two-dimensional systems are characterised by the different propertie...
The Quantum Spin Hall insulator is characterized by the presence of gapless helical edge states wher...
The Quantum Spin Hall insulator is characterized by the presence of gapless helical edge states wher...
International audienceWe propose a minimal effective two-dimensional Hamiltonian for HgTe/CdHgTe qua...
HgTe quantum wells (QWs) are two-dimensional semiconductor systems that change their properties at t...
HgTe quantum wells (QWs) are two-dimensional semiconductor systems that change their properties at t...