The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants if formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfe
A method of forming a semiconductor device includes the following steps: providing a plurality of se...
Different methods to introduce strain in thin silicon device layers are presented. Uniaxial strain i...
The introduction of a mechanically weak porous layer in a III-V substrate represents a novel means b...
The transfer of strained semiconductor layers from one substrate to another substrate involves depos...
We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a...
We report a process for the lift-off of an ultrathin Si layer. By plasma hydrogenation of a molecula...
We have developed an innovative approach without the use of ion implantation to transfer a high-qual...
peer reviewedDifferent methods to introduce strain in thin silicon device layers are presented. Unia...
We have developed an innovative approach without the use of ion implantation to transfer a high-qual...
A method of manufacturing a semiconductor structure includes the steps of depositing a layer of semi...
The theory of elasticity accurately describes the deformations of macroscopic bodies under the actio...
Abstract. We report on a process that enables the removal of II-VI semiconductor epilayers from thei...
International audienceRecently, epitaxial Si layers have attracted strong attention, particularly in...
The use of plasma hydrogenation for relaxed SiGe layer transfer is demonstrated. It is found that th...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
A method of forming a semiconductor device includes the following steps: providing a plurality of se...
Different methods to introduce strain in thin silicon device layers are presented. Uniaxial strain i...
The introduction of a mechanically weak porous layer in a III-V substrate represents a novel means b...
The transfer of strained semiconductor layers from one substrate to another substrate involves depos...
We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a...
We report a process for the lift-off of an ultrathin Si layer. By plasma hydrogenation of a molecula...
We have developed an innovative approach without the use of ion implantation to transfer a high-qual...
peer reviewedDifferent methods to introduce strain in thin silicon device layers are presented. Unia...
We have developed an innovative approach without the use of ion implantation to transfer a high-qual...
A method of manufacturing a semiconductor structure includes the steps of depositing a layer of semi...
The theory of elasticity accurately describes the deformations of macroscopic bodies under the actio...
Abstract. We report on a process that enables the removal of II-VI semiconductor epilayers from thei...
International audienceRecently, epitaxial Si layers have attracted strong attention, particularly in...
The use of plasma hydrogenation for relaxed SiGe layer transfer is demonstrated. It is found that th...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
A method of forming a semiconductor device includes the following steps: providing a plurality of se...
Different methods to introduce strain in thin silicon device layers are presented. Uniaxial strain i...
The introduction of a mechanically weak porous layer in a III-V substrate represents a novel means b...