Extended cavity ridge waveguide lasers operating at 1.5 [micro sign]m using a simple damage induced quantum well intermixing process

The authors report extended cavity ridge waveguide lasers in InGaAs-InGaAsP, intermixed by damage induced via a silica sputtering process, with selective intermixing achieved through photoresist masking. Laser threshold currents indicate passive waveguide losses of 4.4 cm/sup -1/