Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing

Qiu, B.C.
Bryce, A.C.
De La Rue, R.M.
Marsh, J.H.

Publication date

June 1998

DOI

10.1109/68.681478

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Abstract

We report the use of a laser irradiation process, which combines irradiation by continuous wave and Q-switched pulsed Nd:YAG lasers, to promote quantum-well intermixing. Differential shifts up to 70 meV have been obtained in GaInAsP structures. Extended cavity-ridge lasers with 800-μm-long active sections and 1000-μm-long passive sections, were fabricated. The slope efficiency of the extended cavity lasers is very close to that of 800-μm-long all-active lasers, and the threshold current is 10 mA higher than for an 800-μm-long all-active device. The loss in the intermixed single-mode waveguide is 2.1 cm/sup -1/

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Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing

Abstract

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Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing

Abstract

Extracted data

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