Add to ORKGTo increase the integrated circuits pace and decrease the devices size, interconnects must be isolated by porous SiOCH. Because of porous SiOCH degradation by plasma exposure, the integration of narrow trenches into porous SiOCH necessitates to re-develop plasma processes (etching, striping and pore sealing). This thesis addresses plasmas/materials interactions during the integration of porous SiOCH into narrow trenches (The hybrid material and the dense SiOCH present similar etch mechanisms with a fluorocarbon-based plasma. The TiN and the organic material present other etch mechanisms, assuring a good selectivity. The process defined for narrow trenches etching with an organic hard mask leads to straight profiles. On the contrary, profile...
International audienceFor the next technological generations of integrated circuits, the traditional...
As device dimensions continue to shrink, RC delay in interconnects becomes more significant. This de...
As device dimensions continue to shrink, RC delay in interconnects becomes more significant. This de...
To increase the integrated circuits pace and decrease the devices size, interconnects must be isolat...
To increase the integrated circuits pace and decrease the devices size, interconnects must be isolat...
The decrease of the integrated circuits size lets to increase the performances and reduce the manufa...
The decrease of the integrated circuits size lets to increase the performances and reduce the manufa...
The decrease of the integrated circuits size lets to increase the performances and reduce the manufa...
The decrease of the integrated circuits size lets to increase the performances and reduce the manufa...
L'objet de ce travail est la gravure en plasma ICP fluorocarboné de matériaux à faible constante dié...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
International audienceFor the next technological generations of integrated circuits, the traditional...
As device dimensions continue to shrink, RC delay in interconnects becomes more significant. This de...
As device dimensions continue to shrink, RC delay in interconnects becomes more significant. This de...
To increase the integrated circuits pace and decrease the devices size, interconnects must be isolat...
To increase the integrated circuits pace and decrease the devices size, interconnects must be isolat...
The decrease of the integrated circuits size lets to increase the performances and reduce the manufa...
The decrease of the integrated circuits size lets to increase the performances and reduce the manufa...
The decrease of the integrated circuits size lets to increase the performances and reduce the manufa...
The decrease of the integrated circuits size lets to increase the performances and reduce the manufa...
L'objet de ce travail est la gravure en plasma ICP fluorocarboné de matériaux à faible constante dié...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
International audienceFor the next technological generations of integrated circuits, the traditional...
As device dimensions continue to shrink, RC delay in interconnects becomes more significant. This de...
As device dimensions continue to shrink, RC delay in interconnects becomes more significant. This de...