Symposium on Dilute Magnetic Materials for Spintronic Applications held at the 2006 Fall E-MRS Meeting, Warsaw, POLAND, SEP 04-09, 2006International audienceWe report on electron spin physics in a single charge-tunable self-assembled InAs/GaAs quantum dot. The hyperfine interaction between the optically oriented electron and nuclear spins leads to the polarization of the quantum dot nuclei. The sign of the resulting Overhauser-shift depends on the trion state X+ or X, and remarkably its strength does not vanish in zero magnetic field. This explains the quenching of X+ spin relaxation under steady-state excitation polarization. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim
An efficient electron spin-relaxation mechanism has been observed in InAs quantum dots (QDs) that ma...
A high degree of spin polarization for the neutral exciton in individual quantum dots, at zero exter...
Hanle effect in InAs/GaAs quantum dots (QDs) is studied under optical orientation as a function of t...
Symposium on Dilute Magnetic Materials for Spintronic Applications held at the 2006 Fall E-MRS Meeti...
International audienceWe report on the influence of the hyperfine interaction on the optical orienta...
4+ pages, 3 figuresWe report on the dynamic nuclear polarization of a single charge-tunable self-ass...
By using polarization-resolved photoluminescence spectra, we study the electron spin relaxation in s...
In self-assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times t...
Th is work present original results of investigation of nuclear spin dynamics in nanostructure with ...
International audienceWe demonstrate bias control of the efficiency of the hyperfine coupling betwee...
Effects of a longitudinal magnetic field on optical spin injection and detection in InAs/GaAs quantu...
International audienceThe emission of circularly polarized light from a single quantum dot relies on...
International audienceThe spin dynamics of a resident carrier, hole or electron, in singly charged I...
Room-temperature optical and spin polarization up to 35% is reported in InAs/GaAs quantum dots in ze...
We investigate the electric manipulation of a single-electron spin in a single gate-defined quantum ...
An efficient electron spin-relaxation mechanism has been observed in InAs quantum dots (QDs) that ma...
A high degree of spin polarization for the neutral exciton in individual quantum dots, at zero exter...
Hanle effect in InAs/GaAs quantum dots (QDs) is studied under optical orientation as a function of t...
Symposium on Dilute Magnetic Materials for Spintronic Applications held at the 2006 Fall E-MRS Meeti...
International audienceWe report on the influence of the hyperfine interaction on the optical orienta...
4+ pages, 3 figuresWe report on the dynamic nuclear polarization of a single charge-tunable self-ass...
By using polarization-resolved photoluminescence spectra, we study the electron spin relaxation in s...
In self-assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times t...
Th is work present original results of investigation of nuclear spin dynamics in nanostructure with ...
International audienceWe demonstrate bias control of the efficiency of the hyperfine coupling betwee...
Effects of a longitudinal magnetic field on optical spin injection and detection in InAs/GaAs quantu...
International audienceThe emission of circularly polarized light from a single quantum dot relies on...
International audienceThe spin dynamics of a resident carrier, hole or electron, in singly charged I...
Room-temperature optical and spin polarization up to 35% is reported in InAs/GaAs quantum dots in ze...
We investigate the electric manipulation of a single-electron spin in a single gate-defined quantum ...
An efficient electron spin-relaxation mechanism has been observed in InAs quantum dots (QDs) that ma...
A high degree of spin polarization for the neutral exciton in individual quantum dots, at zero exter...
Hanle effect in InAs/GaAs quantum dots (QDs) is studied under optical orientation as a function of t...