A novel photodetector based on the interface coupling effect in silicon-on-insulator MOSFETs
- Deng, J.
- Shao, J.
- Lu, B.
- Chen, Y.
- Zaslavsky, A.
- Cristoloveanu, S.
- Bawedin, M.
- Wan, J.
Publication date
October 2017
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
session: Advanced SOI devices 1International audienceWe report a novel CMOS-compatible photodetector with record responsivity built on a silicon-on-insulator (SOI) substrate. The operating mechanism is based on in the interface coupling effect in the SOI MOSFET, as confirmed by both TCAD simulations and experimental measurements on a prototype device fabricated using a simplified process flow
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