GDNMOS and GDBIMOS devices for ESD protection in 28nm thin film UTBB FD-SOI technology
- de Conti, Louise
- Cristoloveanu, Sorin
- Vinet, Maud
- Galy, Philippe
Publication date
March 2018
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
session 7: CharacterizationInternational audienceGDNMOS (Gated Diode merged NMOS) and GDBIMOS (Gated Diode merged BIMOS) were fabricated using the 28nm thin film UTBB FD-SOI CMOS technology. Different connectivity conditions were measured and simulated. The devices are reconfigurable and promising for ESD protection applications
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