Dual ground plane for high-voltage MOSFET in UTBB FDSOI Technology

International audienceFor the first time, the investigation of a high-voltage MOSFET (HVMOS) in Ultra-Thin Body and Buried oxide Fully Depleted technology (UTBB-FDSOI) is reported. Lateral electric field profile and related breakdown voltage behavior are studied through TCAD simulations. To improve breakdown voltage, an original dual ground plane architecture is proposed and preliminary characterization results are presented