A microsecond time resolved current collapse test setup dedicated to GaN-based Schottky diode characterization
- Lorin, T.
- van den Daele, W.
- Gillot, C.
- Charles, M.
- Biscarrat, J.
- Plissonnier, M.
- Ghibaudo, G.
- Reimbold, G.
Publication date
March 2017
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
session 9: Novel device architecture characterizationInternational audienceThis paper presents a test setup to characterize current collapse effects in power diodes such as GaN-based Schottky junctions. The setup principle and its main parts are described. Current/voltage transients can be recorded very shortly (2 microseconds on wafer prober) after reverse to forward switching. The related trapping effects are analyzed through temperature dependent measurements
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