A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters
- Cristoloveanu, S.
- Lee, K.H.
- Parihar, S.
- El Dirani, H.
- Lacord, J.
- Martinie, S.
- Le Royer, C.
- Barbé, Jean-Charles
- Mescot, X.
- Fonteneau, P.
- Galy, Ph.
- Gamiz, F.
- Navarro, C.
- Cheng, B.
- Duan, M.
- Adamu-Lema, F.
- Asenov, A.
- Taur, Y.
- Xu, Y.
- Kim, Y-T.
- Wan, J.
- Bawedin, M.
DOIAbstract
International audienceThe band-modulation and sharp-switching mechanisms in Z2-FET device operated as a capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the memory performance are discussed based on detailed experiments and simulations. This 1T-DRAM memory does not suffer from super-coupling effect and can be integrated in sub-10 nm thick SOI films. It offers low leakage current, high current margin, long retention, low operating voltage especially for programming, and high speed. The Z2-FET is suitable for embedded memory applications
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