NanoCMOS and steep switch technologies for ultimate nanoelectronics devices

International audienceWe are facing many challenges for future nanoelectronic devices in the next two decades dealing with scaling, power consumption and computing performance. This paper presents the most promising solutions for the end of the roadmap in the More Moore and Beyond-CMOS fields, including innovative nanomaterials such as ultra-thin Si-Ge-III-V/OI, 2D layers (graphene, phosphorene, various transition-metal dichalcogenides), 1D semimetals, heterostructures using strained Si, Ge, III-V (InAs, GaSb, AlGaSb, graded layers, quantum wells, ...), combined with advanced nanodevice architectures, especially ultimate multigate nanoCMOS and Nanowire FETs, Tunnel FETs and FeFET, and combinations of these nanoscale transistors such as FeTFET or TMOSFET