Wafer-Bonded AlGaAs///Si Dual-Junction Solar Cells

session poster (I43)International audienceMonolithic two-terminal III-V on Si dual-junction (2J) solar cells were fabricated by means of Surface-Activated direct wafer Bonding (SAB). Al 0.2 Ga 0.8 As single-junction cells are grown on GaAs substrate by Metal-Organic Vapor Phase Epitaxy (MOVPE) and bonded at room temperature to independently fabricated Si solar cells. The n+-GaAs//n+-Si bonding interface is characterized by Transmission Electron Microscopy (TEM) revealing a 2-3 nm thick amorphous interlayer. The performance of the 1 cm 2 tandem cells, designed for low concentration applications, was studied by External Quantum Efficiency (EQE) and J-V measurements showing a power conversion efficiency of 17% under one-sun AM1.5G spectrum. To our knowledge, this is the highest efficiency ever reported for a wafer-bonded 2J III-V on Si solar cell. Limitations to performance have been identified and therefore higher efficiencies are expected