Statistical analysis of CBRAM endurance
- Robayo, D. Alfaro
- Nail, C.
- Sassine, G.
- Nodin, J.,
- Bernard, M.,
- Raffay, Q.
- Ghibaudo, G.
- Molas, G.
- Nowak, E.
Publication date
April 2018
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
session T6: RRAMInternational audienceIn this paper, we address endurance reliability of resistive RAM at array level. To this aim, Al 2 O 3 based Conductive Bridging RAM (CBRAM) kb arrays are studied. Maximum number of cycles the memory can sustain is statistically analyzed. Impact of SET and RESET conditions and Al 2 O 3 thickness on endurance distributions is discussed. Finally, gradual endurance degradation mechanism is discussed along with defect generation in the resistive layer
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