Selective area growth of AlGaN nanopyramid arrays on graphene by metal organic vapor phase epitaxy

Wide bandgap group III nitride semiconductors are of special interest for applications in ultraviolet light emitting diodes, photodetectors, and lasers. However, epitaxial growth of high quality III nitride semiconductors on conventional single crystalline substrates is challenging due to the lattice mismatch and differences in the thermal expansion coefficients. Recently, it has been shown that graphene, a two dimensional material, can be used as a substrate for growing high quality III V semiconductors via quasi van der Waals epitaxy and overcome the named challenges. Here, we report selective area growth of AlGaN nanopyramids on hole mask patterned single layer graphene using metal organic vapor phase epitaxy. The nanopyramid bases have a hexagonal shape with a very high nucleation yield. After subsequent AlGaN GaN AlGaN overgrowth on the six 101 amp; 9135; amp; 9135;1 101 1 semi polar side facets of the nanopyramids, intense room temperature cathodoluminescence emission is observed at 365 amp; 8201;nm with whispering gallery like modes. This work opens up a route for achieving III nitride opto electronic devices on graphene substrates in the ultraviolet region for future application