Nanocrystalline silicon oxide interlayer in monolithic perovskite silicon heterojunction tandem solar cells with total current density gt;39 mA cm2

Silicon heterojunction solar cells are implemented as bottom cells in monolithic perovskite silicon tandem solar cells. Commonly they are processed with a smooth front side to facilitate wet processing of the lead halide perovskite cell on top. The inherent drawback of this design, namely, enhanced reflection of the cell, can be significantly reduced by replacing the amorphous or nanocrystalline silicon front side n layer of the silicon cell by a nanocrystalline silicon oxide n layer. It is deposited with the same commonly used plasma enhanced chemical vapor deposition and can be tuned to feature opto electrical properties for enhanced light coupling into the Si bottom cell, namely, low parasitic absorption and an intermediate refractive index of 2.6. We demonstrate that a 80 100 nm thick layer results in 0.9 mA cm 2 current gain in the bottom cell yielding tandem cells with a top cell bottom cell total current above 39 mA cm 2 . These first nc SiO x H coupled tandem cells reach an efficiency gt;23.