Terahertz radiation in nanostructures

We explore conductivity of nanostructures in the terahertz range. We model the nanostructure as a square potential well with a barrier inside. We examine how the conductivity depends on temperature, material constants and dimensions of the potential well. The conductivity of the material determines the complex refractive index and thus influences its optical properties such as reflexivity, transmittance and attenuation coefficient. We construct the functional dependency of the conductivity on the electric field frequency. The maxima of this functional dependency correspond to spectral lines. We examined the dependency of the frequencies of the maxima (spectral lines) on various parameters. We got the most interesting result when we continuously changed the position of the barrier inside the potential well. For different heights of the barrier we got qualitatively different results. With high barrier the system behaves as two separate potential wells where we can see monotonous functional dependency of the spectral lines on the position of the barrier. With low potential barrier we get oscillating dependencies. For gallium arsenide and 2 nm width of the potential barrier, high barrier is higher than 1 eV, while low barrier is lower than 0, 05 eV