Add to ORKGThe characteristics of thickness enhancement factor and bandgap wavelength of selectively grown In-GaAsP are investigated. A high thickness enhancement factor of 2.9 is obtained. Spotsize converter integrated DFB lasers are fabricated by using the technique of SAG. The threshold current is as low as 10.8mA. The output power is 10m W at 60mA without coating and the SMSR is 35.8dB. The vertical far field angle (FWHM) is decreased from 34 °to 9 °. The tolerance of 1dBm misalignment is 3.4μm vertically
High-power semiconductor laser is commonly used for pump source, but the absorption spectra width of...
In this work, a novel light source of strained InGaAsP/InGaAsP MQW EAM monolithically integrated wit...
This paper describes the high performance of narrow-beam divergence spot size converter (SSC) integr...
The growth pressure and mask width dependent thickness enhancement factors of selective-area MOCVD. ...
High performance 1.57μm spotsize converter monolithically integrated DFB is fabricated by the techni...
A new type of self-aligned spotsize converter (SSC) integrated 1.55 mum DFB lasers had been proposed...
Selective area growth (SAG) technology has been added to an established InP monolithic integration p...
We report on a 1.55 µm BH l/4 phase-shifted DFB laser with integrated spot-size converter for flip-c...
A novel 1.55 µm laser diode (LD) with monolithically integrated spot-size converter (SSC) is designe...
A novel 1.55 mum laser diode (LD) with monolithically integrated spot-size converter (SSC) is design...
A novel 1.55μm laser diode with spot-size converter is designed and fabricated using conventional ph...
A novel 1.55μm laser diode with spot-size converter is designed and fabricated using conventional ph...
A 1.55-mu m single shallow ridge electroabsorptionmodulated distributed feedback laser that is monol...
1.5 mu m DFB LD butt-joint integrated with vertical tapered spotsize converter was fabricated by LP-...
A 1.55-mum single shallow ridge electroabsorption- modulated distributed feedback laser that is mono...
High-power semiconductor laser is commonly used for pump source, but the absorption spectra width of...
In this work, a novel light source of strained InGaAsP/InGaAsP MQW EAM monolithically integrated wit...
This paper describes the high performance of narrow-beam divergence spot size converter (SSC) integr...
The growth pressure and mask width dependent thickness enhancement factors of selective-area MOCVD. ...
High performance 1.57μm spotsize converter monolithically integrated DFB is fabricated by the techni...
A new type of self-aligned spotsize converter (SSC) integrated 1.55 mum DFB lasers had been proposed...
Selective area growth (SAG) technology has been added to an established InP monolithic integration p...
We report on a 1.55 µm BH l/4 phase-shifted DFB laser with integrated spot-size converter for flip-c...
A novel 1.55 µm laser diode (LD) with monolithically integrated spot-size converter (SSC) is designe...
A novel 1.55 mum laser diode (LD) with monolithically integrated spot-size converter (SSC) is design...
A novel 1.55μm laser diode with spot-size converter is designed and fabricated using conventional ph...
A novel 1.55μm laser diode with spot-size converter is designed and fabricated using conventional ph...
A 1.55-mu m single shallow ridge electroabsorptionmodulated distributed feedback laser that is monol...
1.5 mu m DFB LD butt-joint integrated with vertical tapered spotsize converter was fabricated by LP-...
A 1.55-mum single shallow ridge electroabsorption- modulated distributed feedback laser that is mono...
High-power semiconductor laser is commonly used for pump source, but the absorption spectra width of...
In this work, a novel light source of strained InGaAsP/InGaAsP MQW EAM monolithically integrated wit...
This paper describes the high performance of narrow-beam divergence spot size converter (SSC) integr...