Add to ORKGAn integratable distributed Bragg reflector laser is fabricated by low-energy ion implantation induced quantum well intermixing. A 4.6nm quasi-continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points
The 45-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surface-etched distri...
Ion induced QW intermixing using broad area and focused ion beam (FIB) implantation was investigated...
The 10-GHz passively mode-locked AlGaInAs/InP 1.55- μm extended cavity lasers integrated with optimi...
The two-section tunable ridge waveguide distributed Bragg reflector (DBR) laser fabricated by the se...
The design and operation of long wavelength ridge waveguide distributed Bragg reflector lasers in bo...
The Sampled-Grating Distributed-Bragg-Reflector laser (SGDBR) provides wide tunability (>40nm), a...
A two-section offset quantum-well structure tunable laser with a tuning range of 7 nm was fabricated...
The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2\u20138 M...
A ridge distributed feedback laser monolithically integrated with a buried-ridge-stripe spot-size co...
A ridge distributed feedback laser monolithically integrated with a buried-ridge-stripe spot-size co...
Wavelength tunable electro-absorption modulated distributed Bragg reflector lasers (TEMLs) are promi...
A technique for fabricating many different wavelength lasers on the same wafer has been developed. H...
In this thesis, a low energy shallow ion implantation induced disordering process has been developed...
A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatial...
The 3-section SG-DBR tunable laser is fabricated using an ion implantation quantum-well intermixing ...
The 45-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surface-etched distri...
Ion induced QW intermixing using broad area and focused ion beam (FIB) implantation was investigated...
The 10-GHz passively mode-locked AlGaInAs/InP 1.55- μm extended cavity lasers integrated with optimi...
The two-section tunable ridge waveguide distributed Bragg reflector (DBR) laser fabricated by the se...
The design and operation of long wavelength ridge waveguide distributed Bragg reflector lasers in bo...
The Sampled-Grating Distributed-Bragg-Reflector laser (SGDBR) provides wide tunability (>40nm), a...
A two-section offset quantum-well structure tunable laser with a tuning range of 7 nm was fabricated...
The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2\u20138 M...
A ridge distributed feedback laser monolithically integrated with a buried-ridge-stripe spot-size co...
A ridge distributed feedback laser monolithically integrated with a buried-ridge-stripe spot-size co...
Wavelength tunable electro-absorption modulated distributed Bragg reflector lasers (TEMLs) are promi...
A technique for fabricating many different wavelength lasers on the same wafer has been developed. H...
In this thesis, a low energy shallow ion implantation induced disordering process has been developed...
A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatial...
The 3-section SG-DBR tunable laser is fabricated using an ion implantation quantum-well intermixing ...
The 45-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surface-etched distri...
Ion induced QW intermixing using broad area and focused ion beam (FIB) implantation was investigated...
The 10-GHz passively mode-locked AlGaInAs/InP 1.55- μm extended cavity lasers integrated with optimi...