An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V
The design of a feedback insensitive DFB Laser/electroabsorption modulator package is presented. The...
A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorpt...
We report on the design and experimental results of monolithically integrated optoelec-tronic device...
A 1.55 mu m InGaAsP/InGaAsP multiple-quantum-well electro-absorption modulator (EAM) monolithically ...
An electroabsorption modulator (EAM) was integrated with a distributed feedback laser and a spot-siz...
This paper reports on the design, fabrication, and performance of an integrated electro-absorptive m...
High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption ...
A novel butt-joint coupling scheme is proposed to improve the coupling efficiency for the integratio...
A 1.55-mu m single shallow ridge electroabsorptionmodulated distributed feedback laser that is monol...
1.55 µm electroabsorption-modulated laser (EML) devices designed for flip-chip mounting have been de...
A monolithically integrated dual electroabsorption modulated laser (DEML), consisting of distributed...
A new method for fabricating electroabsorption modulator integrated with a distributed feedback lase...
A 40-Gb/s monolithically integrated transmitter containing an InGaAsP multiple-quantum-well electroa...
A 1.55-mum single shallow ridge electroabsorption- modulated distributed feedback laser that is mono...
We report an electro-absorption modulator integrated with a distributed feedback Bragg laser fabrica...
The design of a feedback insensitive DFB Laser/electroabsorption modulator package is presented. The...
A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorpt...
We report on the design and experimental results of monolithically integrated optoelec-tronic device...
A 1.55 mu m InGaAsP/InGaAsP multiple-quantum-well electro-absorption modulator (EAM) monolithically ...
An electroabsorption modulator (EAM) was integrated with a distributed feedback laser and a spot-siz...
This paper reports on the design, fabrication, and performance of an integrated electro-absorptive m...
High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption ...
A novel butt-joint coupling scheme is proposed to improve the coupling efficiency for the integratio...
A 1.55-mu m single shallow ridge electroabsorptionmodulated distributed feedback laser that is monol...
1.55 µm electroabsorption-modulated laser (EML) devices designed for flip-chip mounting have been de...
A monolithically integrated dual electroabsorption modulated laser (DEML), consisting of distributed...
A new method for fabricating electroabsorption modulator integrated with a distributed feedback lase...
A 40-Gb/s monolithically integrated transmitter containing an InGaAsP multiple-quantum-well electroa...
A 1.55-mum single shallow ridge electroabsorption- modulated distributed feedback laser that is mono...
We report an electro-absorption modulator integrated with a distributed feedback Bragg laser fabrica...
The design of a feedback insensitive DFB Laser/electroabsorption modulator package is presented. The...
A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorpt...
We report on the design and experimental results of monolithically integrated optoelec-tronic device...