Add to ORKGWe have studied the vertical transport and formation mechanisms of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. Under hydrostatic pressure two kinds of sequential resonant tunneling are observed within the pressure range from 0 to 4.5 kbar. A transition from Gamma-Gamma to Gamma-X sequential resonant tunneling occurs at P-t approximate to 1.6 kbar. For P P-t it is preferentially formed by the Gamma-X process
We have carried out sensitive measurement of the vertical transport characteristics of several GaAs/...
We have carried out sensitive measurement of the vertical transport characteristics of several GaAs/...
We observed the transverse magnetic field induced transition from static to dynamic electric field d...
Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field ...
Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field ...
We have studied the sequential resonant tunneling of doped weakly coupled GaAs/AlAs superlattices un...
The behavior of room temperature self-sustained current oscillations resulting from sequential reson...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneli...
We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneli...
We have carried out sensitive measurement of the vertical transport characteristics of several GaAs/...
We have carried out sensitive measurement of the vertical transport characteristics of several GaAs/...
We observed the transverse magnetic field induced transition from static to dynamic electric field d...
Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field ...
Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field ...
We have studied the sequential resonant tunneling of doped weakly coupled GaAs/AlAs superlattices un...
The behavior of room temperature self-sustained current oscillations resulting from sequential reson...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneli...
We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneli...
We have carried out sensitive measurement of the vertical transport characteristics of several GaAs/...
We have carried out sensitive measurement of the vertical transport characteristics of several GaAs/...
We observed the transverse magnetic field induced transition from static to dynamic electric field d...