Add to ORKGThe influences of microdefects and dislocations on the lattice parameters of undoped semi-insulating GaAs single crystals were analyzed, and a novel nondestructive method for measuring stoichiometry in undoped semi-insulating GaAs was established in this letter. The comparison of this method with coulometric titration indicates that the method of nondestructive measurements is indeed convenient and reliable. (C) 1996 American Institute of Physics
Subgab absorption measurements carried out by photothermal deflection spectroscopy in semi-insulatin...
The physical properties of crystalline III-V compounds with zincblende structure are well known [1]....
In this chapter, not only are the electrical and optical properties of semi-insulating GaAs discusse...
A semi-insulating (SI) GaAs single crystal ingot was successfully grown in a recoverable satellite. ...
The influences of arsenic interstitials and dislocations on the lattice parameters of undoped semi-i...
A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially...
The X-ray double crystal diffractometry method was employed to measure variations in dislocation den...
The semiconductor GaAs is an interesting material for ultra-high-speed les. Many important propertie...
Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) ...
A model for analyzing the correlation between lattice parameters and point defects in semiconductors...
High-purity n-type GaAs crystal was grown by the Synthesis, Solute Diffusion (SSD) method. Deep Leve...
The behaviour of group III, IV and VI dopants in vertical Bridgman grown GaAs was studied as a funct...
The dislocations and precipitates in SI-GaAs single crystals are revealed by ultrasonic-aided Abraha...
GaAs single crystal has been grown in recoverable satellite. Hall measurements indicate that the GaA...
The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-tra...
Subgab absorption measurements carried out by photothermal deflection spectroscopy in semi-insulatin...
The physical properties of crystalline III-V compounds with zincblende structure are well known [1]....
In this chapter, not only are the electrical and optical properties of semi-insulating GaAs discusse...
A semi-insulating (SI) GaAs single crystal ingot was successfully grown in a recoverable satellite. ...
The influences of arsenic interstitials and dislocations on the lattice parameters of undoped semi-i...
A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially...
The X-ray double crystal diffractometry method was employed to measure variations in dislocation den...
The semiconductor GaAs is an interesting material for ultra-high-speed les. Many important propertie...
Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) ...
A model for analyzing the correlation between lattice parameters and point defects in semiconductors...
High-purity n-type GaAs crystal was grown by the Synthesis, Solute Diffusion (SSD) method. Deep Leve...
The behaviour of group III, IV and VI dopants in vertical Bridgman grown GaAs was studied as a funct...
The dislocations and precipitates in SI-GaAs single crystals are revealed by ultrasonic-aided Abraha...
GaAs single crystal has been grown in recoverable satellite. Hall measurements indicate that the GaA...
The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-tra...
Subgab absorption measurements carried out by photothermal deflection spectroscopy in semi-insulatin...
The physical properties of crystalline III-V compounds with zincblende structure are well known [1]....
In this chapter, not only are the electrical and optical properties of semi-insulating GaAs discusse...