Neutron transmutation doped (NTD) silicon crystals grown in a hydrogen atmosphere have been investigated by infrared absorption spectroscopy at a low temperature (10 K). An effective-mass-like donor state HD0/+ has been found at 110.8 me V below the conduction band bottom after rapid thermal annealing (RTA). The HD0/+ formation mechanism after NTD and RTA is briefly discussed, and tentatively attributed to H atoms present in the vicinity of some residual irradiation defects, like a complex of a H atom and a H-saturated vacancy
Silicon lattice vacancies exist in all silicon wafers and they increase in concentration due to high...
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing ...
Hydrogen (H) is thought to be strongly involved in the light and elevated temperature-induced degrad...
Isochronal thermal-annealing behavior of NTD floating-zone silicon grown in hydrogen ambient (called...
The hydrogen-plasma-accelerated formation of shallow thermal donors in silicon has been studied for ...
This work is devoted to the characterization of the Si:H system obtained by high-fluence, low-energy...
The impact of the thermal budget on hydrogen-related donor profiles in high purity silicon implanted...
In this work, the formation of donors in n-type high resistivity magnetic Czochralski-grown silicon ...
Effects of hydrogen on electrical properties and annealing behavior of radiation defects in N- and P...
The growth of a displacement field in single crystal silicon resulting from high dose hydrogen impla...
Infrared absorption experiments have been performed on hydrogenated and deuterated bulk boron- and a...
Silicon irradiated with fast neutrons exhibits a variety of infrared absorption, photoconductivity [...
We previously reported on ultrashallow thermal donors (USTDs) in carbon-doped oxygen-containing mono...
A new Si-H infrared absorption peak at 2016 cm(-1) is found to be related to the hydrogen-defect sha...
A modelling study of several oxygen related defects in silicon and germanium crystals is reported. T...
Silicon lattice vacancies exist in all silicon wafers and they increase in concentration due to high...
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing ...
Hydrogen (H) is thought to be strongly involved in the light and elevated temperature-induced degrad...
Isochronal thermal-annealing behavior of NTD floating-zone silicon grown in hydrogen ambient (called...
The hydrogen-plasma-accelerated formation of shallow thermal donors in silicon has been studied for ...
This work is devoted to the characterization of the Si:H system obtained by high-fluence, low-energy...
The impact of the thermal budget on hydrogen-related donor profiles in high purity silicon implanted...
In this work, the formation of donors in n-type high resistivity magnetic Czochralski-grown silicon ...
Effects of hydrogen on electrical properties and annealing behavior of radiation defects in N- and P...
The growth of a displacement field in single crystal silicon resulting from high dose hydrogen impla...
Infrared absorption experiments have been performed on hydrogenated and deuterated bulk boron- and a...
Silicon irradiated with fast neutrons exhibits a variety of infrared absorption, photoconductivity [...
We previously reported on ultrashallow thermal donors (USTDs) in carbon-doped oxygen-containing mono...
A new Si-H infrared absorption peak at 2016 cm(-1) is found to be related to the hydrogen-defect sha...
A modelling study of several oxygen related defects in silicon and germanium crystals is reported. T...
Silicon lattice vacancies exist in all silicon wafers and they increase in concentration due to high...
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing ...
Hydrogen (H) is thought to be strongly involved in the light and elevated temperature-induced degrad...