Two samples of nominal 20-period Ge0.20Si0.80(5 nm)/Si(25 nm) and Ge0.5Si0.5(5 nm)/Si(25 nm) strained-layer superlattices (SLSs) were studied by the double-crystal X-ray diffraction method. It is convenient to define the perpendicular strains relative to the average crystal. Computer simulations of the rocking curves were performed using a kinematical step model. An excellent agreement between the measured and simulated satellite patterns is achieved. The dependence of the sensitivity of the rocking curves to the structural parameters of the SLS, such as the alloying concentration x and the layer thicknesses and the L component of the reflection g = (HKL), are clearly demonstrated
We present detailed analyses of x-ray double-crystal rocking curve measurements of superlattices. Th...
A complex investigation into the structural perfection of the Si/SiGe superlattices grown by molecul...
A matrix formulation has been developed and applied to simulate large-angle convergent-beam electron...
20-period strained-layer superlattices of nominal composition and width Ge0.2Si0.8 (5 nm)/Si(25 nm) ...
20-period strained-layer superlattices of nominal composition and width Ge0.2Si0.8 (5 nm)/Si(25 nm) ...
Side bands due to purely composition and combined composition-strain modulation in plan-view specime...
Structural investigations of high quality Si/Ge strained-layer superlattices (SLSs) on [001] oriente...
Diffraction from totally relaxed, partially relaxed, and unrelaxed strained-layer superlattices is c...
An ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer super lattices grown by MBE at low te...
High resolution and analytical transmission electron microscopy (TEM) and X-ray diffraction (XRD) we...
Double crystal and triple axis X-ray diffractometry was used to characterize the structural properti...
Short-period Si/Ge strained-layer superlattices are grown by molecular beam epitaxy (MBE) on Si(100)...
The nanometre scale of the novel strained layer electronic devices now being grown requires characte...
We report on growth and properties of Si/SiGe strained layer superlattices. Critical thicknesses and...
We illustrate the usefulness of the Extended X-ray Absorption Fine Structure (EXAFS) technique to de...
We present detailed analyses of x-ray double-crystal rocking curve measurements of superlattices. Th...
A complex investigation into the structural perfection of the Si/SiGe superlattices grown by molecul...
A matrix formulation has been developed and applied to simulate large-angle convergent-beam electron...
20-period strained-layer superlattices of nominal composition and width Ge0.2Si0.8 (5 nm)/Si(25 nm) ...
20-period strained-layer superlattices of nominal composition and width Ge0.2Si0.8 (5 nm)/Si(25 nm) ...
Side bands due to purely composition and combined composition-strain modulation in plan-view specime...
Structural investigations of high quality Si/Ge strained-layer superlattices (SLSs) on [001] oriente...
Diffraction from totally relaxed, partially relaxed, and unrelaxed strained-layer superlattices is c...
An ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer super lattices grown by MBE at low te...
High resolution and analytical transmission electron microscopy (TEM) and X-ray diffraction (XRD) we...
Double crystal and triple axis X-ray diffractometry was used to characterize the structural properti...
Short-period Si/Ge strained-layer superlattices are grown by molecular beam epitaxy (MBE) on Si(100)...
The nanometre scale of the novel strained layer electronic devices now being grown requires characte...
We report on growth and properties of Si/SiGe strained layer superlattices. Critical thicknesses and...
We illustrate the usefulness of the Extended X-ray Absorption Fine Structure (EXAFS) technique to de...
We present detailed analyses of x-ray double-crystal rocking curve measurements of superlattices. Th...
A complex investigation into the structural perfection of the Si/SiGe superlattices grown by molecul...
A matrix formulation has been developed and applied to simulate large-angle convergent-beam electron...