Add to ORKGIn this report we present the effects of 1 MeV-electron irradiation on i a-Si:H films and solar cells. It is observed that in the dose range of 1.4-8.4 x 10(15) cm(-2) the defect creation has not reached its saturation level and the metastable defects caused by the irradiation cannot be completely removed by a two hour annealing at 200 degrees C for i a-Si:H films or at 130 degrees C for a-Si:H solar cells. The results may be understood in terms of a model based on two kinds of metastable defects created by 1 MeV-electron irradiation
Current-voltage under illumination and quantum yield characteristics of an amorphous silicon/crystal...
The paper reports on the effects of a proton irradiation campaign on a series of thin-film silicon s...
In order to predict the probable degradation of spacecraft solar cells and arrays in orbit it is nec...
Amorphous Si:H and amorphous Si sub x, Ge sub (1-x):H solar cells were irradiated with 1.00 MeV prot...
Energetic particles such as electrons and protons induce severe degradation on the performance of so...
Creation of Metastable Defects in Microcrystalline Silicon Films by keV Electron Irradiatio
Firstly the basic principles involved in the generation and recombination of electron-hole pairs is ...
It was shown that 1 MeV proton irradiation with fluences of 1.25E14 and 1.25E15/sq cm reduces the no...
The effect of 40 keV electron irradiation on a-Si:H p-i-n single-junction solar cells was investigat...
Silicon lattice vacancies exist in all silicon wafers and they increase in concentration due to high...
The reasons for interest in irradiation effects on solar cells are reviewed. It is shown that studie...
Solar cells are the prime power supply for satellites in space. Space is, however, a hostile environ...
We summarize an extensive study on the impact of absorber layer defect density on the performance of...
radiation damage in semiconductorsXI1: Effects of high energy electrons in silicon and silicon solar...
This chapter looks at whether thermal and light-induced annealing of metastable defects in a-Si:H dr...
Current-voltage under illumination and quantum yield characteristics of an amorphous silicon/crystal...
The paper reports on the effects of a proton irradiation campaign on a series of thin-film silicon s...
In order to predict the probable degradation of spacecraft solar cells and arrays in orbit it is nec...
Amorphous Si:H and amorphous Si sub x, Ge sub (1-x):H solar cells were irradiated with 1.00 MeV prot...
Energetic particles such as electrons and protons induce severe degradation on the performance of so...
Creation of Metastable Defects in Microcrystalline Silicon Films by keV Electron Irradiatio
Firstly the basic principles involved in the generation and recombination of electron-hole pairs is ...
It was shown that 1 MeV proton irradiation with fluences of 1.25E14 and 1.25E15/sq cm reduces the no...
The effect of 40 keV electron irradiation on a-Si:H p-i-n single-junction solar cells was investigat...
Silicon lattice vacancies exist in all silicon wafers and they increase in concentration due to high...
The reasons for interest in irradiation effects on solar cells are reviewed. It is shown that studie...
Solar cells are the prime power supply for satellites in space. Space is, however, a hostile environ...
We summarize an extensive study on the impact of absorber layer defect density on the performance of...
radiation damage in semiconductorsXI1: Effects of high energy electrons in silicon and silicon solar...
This chapter looks at whether thermal and light-induced annealing of metastable defects in a-Si:H dr...
Current-voltage under illumination and quantum yield characteristics of an amorphous silicon/crystal...
The paper reports on the effects of a proton irradiation campaign on a series of thin-film silicon s...
In order to predict the probable degradation of spacecraft solar cells and arrays in orbit it is nec...