Add to ORKGSingle mode 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) was reported in this paper. Selected buried rigewaveguid were applied for single mode operation especially for DVD use. The operating temperature over 90 degree at CW output power 5 mW was achieved
Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on ...
1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well (MD-MQW) DFB lasers have been...
[[abstract]]High temperature, low threshold current, and transverse mode stabilised operation is ach...
Main application of 650nm band laser diodes are for digital versatile disk (DVD). We demonstrate her...
Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grow...
650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemi...
High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by ...
[[abstract]]General requirements of AlGaInP/InGaP laser diode (LD) for digital versatile disk (DVD) ...
[[abstract]]General requirements of AlGaInP/InGaP laser diode (LD) for digital versatile disk (DVD) ...
The use of expanded mode layers in lasers designed for DVD read/write applications is investigated a...
The use of expanded mode layers in lasers designed for DVD read/write applications is investigated a...
The use of expanded mode layers in lasers designed for DVD read/write applications is investigated a...
In this paper, we conduct a theoretical analysis of the design, fabrication, and performance measure...
Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on ...
[[abstract]]High-temperature and low-threshold-current of 1.5 mu m strain-compensated multiple-quant...
Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on ...
1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well (MD-MQW) DFB lasers have been...
[[abstract]]High temperature, low threshold current, and transverse mode stabilised operation is ach...
Main application of 650nm band laser diodes are for digital versatile disk (DVD). We demonstrate her...
Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grow...
650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemi...
High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by ...
[[abstract]]General requirements of AlGaInP/InGaP laser diode (LD) for digital versatile disk (DVD) ...
[[abstract]]General requirements of AlGaInP/InGaP laser diode (LD) for digital versatile disk (DVD) ...
The use of expanded mode layers in lasers designed for DVD read/write applications is investigated a...
The use of expanded mode layers in lasers designed for DVD read/write applications is investigated a...
The use of expanded mode layers in lasers designed for DVD read/write applications is investigated a...
In this paper, we conduct a theoretical analysis of the design, fabrication, and performance measure...
Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on ...
[[abstract]]High-temperature and low-threshold-current of 1.5 mu m strain-compensated multiple-quant...
Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on ...
1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well (MD-MQW) DFB lasers have been...
[[abstract]]High temperature, low threshold current, and transverse mode stabilised operation is ach...