Add to ORKGHigh performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5mA and the highest lasing temperature of 122 degrees C were obtained
Abstract—In this paper, we present the characteristics of high-performance strain-compensated MOCVD-...
1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well (MD-MQW) DFB lasers have been...
133 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.The metalorganic chemical vap...
Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grow...
1.6-1.7 mu m highly strained InGaAs/InGaAsP distributed feedback lasers was grown and fabricated by ...
1.6—1.7μm highly strained InGaAs/InGaAsP distributed feedback lasers was grown and fabricated by low...
650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemi...
Abstract—This letter reports studies on highly strained and strain-compensated InGaAs quantum-well (...
[[abstract]]High-temperature and low-threshold-current of 1.5 mu m strain-compensated multiple-quant...
Single mode 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vap...
In this paper, we conduct a theoretical analysis of the design, fabrication, and performance measure...
95 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.This thesis describes several ...
We fabricate 1.5 mu m InGaAsP/InP tunnel injection multiple-quantum-well (TI-MQW) Fabry-Perot (F-P) ...
The paper presents the results of the application of MOCVD growth technique for formation of the GaA...
Ridge-waveguide distributed-feedback(DFB) lasers with highly strained InGaAs/InGaAsP active regions,...
Abstract—In this paper, we present the characteristics of high-performance strain-compensated MOCVD-...
1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well (MD-MQW) DFB lasers have been...
133 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.The metalorganic chemical vap...
Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grow...
1.6-1.7 mu m highly strained InGaAs/InGaAsP distributed feedback lasers was grown and fabricated by ...
1.6—1.7μm highly strained InGaAs/InGaAsP distributed feedback lasers was grown and fabricated by low...
650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemi...
Abstract—This letter reports studies on highly strained and strain-compensated InGaAs quantum-well (...
[[abstract]]High-temperature and low-threshold-current of 1.5 mu m strain-compensated multiple-quant...
Single mode 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vap...
In this paper, we conduct a theoretical analysis of the design, fabrication, and performance measure...
95 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.This thesis describes several ...
We fabricate 1.5 mu m InGaAsP/InP tunnel injection multiple-quantum-well (TI-MQW) Fabry-Perot (F-P) ...
The paper presents the results of the application of MOCVD growth technique for formation of the GaA...
Ridge-waveguide distributed-feedback(DFB) lasers with highly strained InGaAs/InGaAsP active regions,...
Abstract—In this paper, we present the characteristics of high-performance strain-compensated MOCVD-...
1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well (MD-MQW) DFB lasers have been...
133 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.The metalorganic chemical vap...