Fe is still the commonly used dopant to fabricate semi-insulating(SI) InP, a key material for high-speed electronic and optoelectronic devices. High resolved absorption spectra of the internal d-d shell transitions at Fe2+ in InP and the related phonon sidebands and a series of iron related absorption Lines are presented. Detailed infrared absorption study of the characteristic spectra of four zero-phonon lines(ZPLs), which are attributed to transitions within the 5D ground state of Fe2+ (3d(6)) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given
As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance m...
The intentional inclusion of foreign atoms in semiconductors is a common method to tailor their phys...
Optical absorption and photoluminescence (PL) measurements were carried out in both undoped and Fe-d...
This paper presents a detailed PL study of Fe2+ related four zero-phonon(ZP) lines and their related...
The measurement of photoconductivity in samples of semi-insulating n-type Fe-doped InP are reported....
Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have b...
It has recently been reported that high-resistivity Fe-doped InP wafers can present very different c...
Properties of Fe-doped semi-insulating (SI) InP with different iron concentration are studied by usi...
Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to st...
Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by us...
This paper reports the use of the nuclear transmutation back doping technique for studying the deep ...
In an attempt to clarify the origin of the limited electrical activity of Fe implanted in InP we rep...
A detailed study of Fe implantation and damage annealing in indium phosphide is presented. The techn...
We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafer...
After illumination with 1-1.3 eV photons during cooling-down, metastable PH modes are observed by IR...
As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance m...
The intentional inclusion of foreign atoms in semiconductors is a common method to tailor their phys...
Optical absorption and photoluminescence (PL) measurements were carried out in both undoped and Fe-d...
This paper presents a detailed PL study of Fe2+ related four zero-phonon(ZP) lines and their related...
The measurement of photoconductivity in samples of semi-insulating n-type Fe-doped InP are reported....
Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have b...
It has recently been reported that high-resistivity Fe-doped InP wafers can present very different c...
Properties of Fe-doped semi-insulating (SI) InP with different iron concentration are studied by usi...
Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to st...
Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by us...
This paper reports the use of the nuclear transmutation back doping technique for studying the deep ...
In an attempt to clarify the origin of the limited electrical activity of Fe implanted in InP we rep...
A detailed study of Fe implantation and damage annealing in indium phosphide is presented. The techn...
We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafer...
After illumination with 1-1.3 eV photons during cooling-down, metastable PH modes are observed by IR...
As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance m...
The intentional inclusion of foreign atoms in semiconductors is a common method to tailor their phys...
Optical absorption and photoluminescence (PL) measurements were carried out in both undoped and Fe-d...