Add to ORKGIn this paper, we investigate the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides. It is demonstrated that chemical preoxide grown in H2SO4/H2O2 (SPM) solution prior to oxidation provides better oxide integrity than both HF-based solution dipping and preoxide grown in RCA SC1 or SC2 solutions. It is also found that the oxides with SPM preoxide exhibit better hot-carrier immunity than the RCA cleaned oxides
Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the prepa ra...
We analyze the chemical passivation quality of silicon oxide nanolayers on crystalline silicon wafer...
Growing SiO2 layer by wet-chemical oxidation of Si surfaces before growth of another insulating film...
In recent years, there is a lot of interest in developing alternative techniques for growing ultrath...
The purpose of this thesis was to investigate the effects of pre- and post-oxidation RCA cleaning on...
Gate oxide reliability can be effectively improved by using dry field oxidation instead of the conve...
ABSTRACT We analyze the influence of different oxidation methods on the chemical passivation qualit...
AbstractWithin this paper the applicability of three methods to clean and condition the surface of s...
As semiconductor devices get faster and more compact, the equivalent gate dielectric thickness is re...
The quality of thin gate oxides grown on separation by implantation of oxygen substrates was examine...
In this work we present the surface passivation properties of pre-oxidized Si(100) surfaces compared...
This work shows an alternative surface cleaning method for c-Si wafers to replace the standard chem...
The successful application of silicon oxide Si SiO2 interfaces for nanostructures in third generat...
Isopropyl alcohol (IPA) has been conventionally used for pre-cleaning processes. As the device size ...
AbstractIn this work we present the surface passivation properties of pre-oxidized Si(100) surfaces ...
Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the prepa ra...
We analyze the chemical passivation quality of silicon oxide nanolayers on crystalline silicon wafer...
Growing SiO2 layer by wet-chemical oxidation of Si surfaces before growth of another insulating film...
In recent years, there is a lot of interest in developing alternative techniques for growing ultrath...
The purpose of this thesis was to investigate the effects of pre- and post-oxidation RCA cleaning on...
Gate oxide reliability can be effectively improved by using dry field oxidation instead of the conve...
ABSTRACT We analyze the influence of different oxidation methods on the chemical passivation qualit...
AbstractWithin this paper the applicability of three methods to clean and condition the surface of s...
As semiconductor devices get faster and more compact, the equivalent gate dielectric thickness is re...
The quality of thin gate oxides grown on separation by implantation of oxygen substrates was examine...
In this work we present the surface passivation properties of pre-oxidized Si(100) surfaces compared...
This work shows an alternative surface cleaning method for c-Si wafers to replace the standard chem...
The successful application of silicon oxide Si SiO2 interfaces for nanostructures in third generat...
Isopropyl alcohol (IPA) has been conventionally used for pre-cleaning processes. As the device size ...
AbstractIn this work we present the surface passivation properties of pre-oxidized Si(100) surfaces ...
Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the prepa ra...
We analyze the chemical passivation quality of silicon oxide nanolayers on crystalline silicon wafer...
Growing SiO2 layer by wet-chemical oxidation of Si surfaces before growth of another insulating film...