980nm InGaAs/InGaAsP/AlGaAs strained quantum well lasers,vitta novel large optical cavity and asymmetrical claddings was fabricated bg MOCVD. Very high differential quantum efficiency elf 90% (1.15W/A) and low vertical divergence angle of 24 degrees at long cavity length were obtained for 100 mu m stripe lasers. The differential quantum efficiency is up to 94% (1.20) at cavity length of 500 mu m
Thin p-clad InGaAs ridge waveguide quantum-well lasers having an asymmetric structure design were fa...
We report on the design and fabrication of high performance 800-1000 nm high power lasers using an a...
A specially designed quantum well laser for achieving extremely low vertical beam divergence was rep...
In this paper, we report on the design, growth and fabrication of 980nm strained InGaAs quantum well...
To achieve high optical power as well as low vertical divergence angle, a new kind of optimized larg...
In order to decrease the generated heat during pumping laser crystals, and enhance the efficiency of...
In this paper, we reported on the fabrication of 980 nm InGaAs/InGaAsP strained quantum-well (QW) la...
We report on the material growth and fabrication of high-performance 980-nm strained quantum-well la...
In this paper, we conduct a theoretical analysis of the design, fabrication, and performance measure...
The authors report on the fabrication of 980 nm InGaAs strained quantum well lasers with hybrid mate...
A novel asymmetric broad waveguide diode laser structure was designed for high power conversion effi...
Abstract—This letter reports studies on highly strained and strain-compensated InGaAs quantum-well (...
The 808nm laser diodes with a broad waveguide are designed and fabricated. The thickness of the Al_(...
Ridge-waveguide distributed-feedback(DFB) lasers with highly strained InGaAs/InGaAsP active regions,...
High-performance 1.06-μm InGaAs/GaAs double-quantum-well (DQW) asymmetric herero- structure semicond...
Thin p-clad InGaAs ridge waveguide quantum-well lasers having an asymmetric structure design were fa...
We report on the design and fabrication of high performance 800-1000 nm high power lasers using an a...
A specially designed quantum well laser for achieving extremely low vertical beam divergence was rep...
In this paper, we report on the design, growth and fabrication of 980nm strained InGaAs quantum well...
To achieve high optical power as well as low vertical divergence angle, a new kind of optimized larg...
In order to decrease the generated heat during pumping laser crystals, and enhance the efficiency of...
In this paper, we reported on the fabrication of 980 nm InGaAs/InGaAsP strained quantum-well (QW) la...
We report on the material growth and fabrication of high-performance 980-nm strained quantum-well la...
In this paper, we conduct a theoretical analysis of the design, fabrication, and performance measure...
The authors report on the fabrication of 980 nm InGaAs strained quantum well lasers with hybrid mate...
A novel asymmetric broad waveguide diode laser structure was designed for high power conversion effi...
Abstract—This letter reports studies on highly strained and strain-compensated InGaAs quantum-well (...
The 808nm laser diodes with a broad waveguide are designed and fabricated. The thickness of the Al_(...
Ridge-waveguide distributed-feedback(DFB) lasers with highly strained InGaAs/InGaAsP active regions,...
High-performance 1.06-μm InGaAs/GaAs double-quantum-well (DQW) asymmetric herero- structure semicond...
Thin p-clad InGaAs ridge waveguide quantum-well lasers having an asymmetric structure design were fa...
We report on the design and fabrication of high performance 800-1000 nm high power lasers using an a...
A specially designed quantum well laser for achieving extremely low vertical beam divergence was rep...
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