Optical study of electronic states in GaAsN

Luo XD
Yang CL
Huang JS
Xu ZY
Liu J
Ge WK
Zhang Y
Mascarenhas A
Xin HP
Tu CW
Luo XD Chinese Acad Sci Inst Semicond NLSM Beijing 100083 Peoples R China.

Publication date

January 2002

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Abstract

GaAs1-xNx alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitaiton PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states

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Optical study of electronic states in GaAsN

Abstract

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Optical study of electronic states in GaAsN

Abstract

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