Add to ORKGA technique based on the integrations of the product of amplified spontaneous emission spectrum and a phase function over one mode interval is proposed for measuring gain spectrum for Fabry-Perot semiconductor lasers, and a gain correction factor related to the response function of the optical spectrum analyzer (OSA) is obtained for improving the accuracy of measured gain spectrum. The gain spectra with a difference less than 1.3 cm(-1) from 1500 to 1600 nm are obtained for a 250-mum-long semiconductor laser at the OSA resolution of 0.06, 0.1, 0.2, and 0.5 nm. The corresponding gain correction factor is about 9 cm(-1) at the resolution of 0.5 nm. The gain spectrum measured at the resolution of 0.5 nm has the same accuracy as that obtained b...
In this paper we present the use of an ultra-high resolution (20 MHz) spectrometer to measure the ga...
The design and fabrication of 1550 nm semiconductor optical amplifiers (SOAs) and the characteristic...
The unamplified spontaneous emission spectrum emitted under high injection conditions provides a val...
To improve the accuracy of measured gain spectra, which is usually limited by the resolution of the ...
A gain measurement technique, based on Fourier series expansion of periodically extended single frin...
Measurements of the optical gain in a semiconductor laser using a 20 MHz resolution optical spectrum...
Measurements of the optical gain in a semiconductor laser using a 20 MHz resolution optical spectrum...
Measurements of the optical gain in a semiconductor laser using a 20 MHz resolution optical spectrum...
Measurements of the optical gain in a semiconductor laser using a 20 MHz resolution optical spectrum...
Measurements of the optical gain in a semiconductor laser using a 20 MHz resolution optical spectrum...
Spectral gain studies were carried out for two different laser diode structures from the recordings ...
Spectral gain studies were carried out for two different laser diode structures from the recordings ...
Spectral gain studies were carried out for two different laser diode structures from the recordings ...
In this paper we present the use of an ultra-high resolution (20 MHz) spectrometer to measure the ga...
In this paper we present the use of an ultra-high resolution (20 MHz) spectrometer to measure the ga...
In this paper we present the use of an ultra-high resolution (20 MHz) spectrometer to measure the ga...
The design and fabrication of 1550 nm semiconductor optical amplifiers (SOAs) and the characteristic...
The unamplified spontaneous emission spectrum emitted under high injection conditions provides a val...
To improve the accuracy of measured gain spectra, which is usually limited by the resolution of the ...
A gain measurement technique, based on Fourier series expansion of periodically extended single frin...
Measurements of the optical gain in a semiconductor laser using a 20 MHz resolution optical spectrum...
Measurements of the optical gain in a semiconductor laser using a 20 MHz resolution optical spectrum...
Measurements of the optical gain in a semiconductor laser using a 20 MHz resolution optical spectrum...
Measurements of the optical gain in a semiconductor laser using a 20 MHz resolution optical spectrum...
Measurements of the optical gain in a semiconductor laser using a 20 MHz resolution optical spectrum...
Spectral gain studies were carried out for two different laser diode structures from the recordings ...
Spectral gain studies were carried out for two different laser diode structures from the recordings ...
Spectral gain studies were carried out for two different laser diode structures from the recordings ...
In this paper we present the use of an ultra-high resolution (20 MHz) spectrometer to measure the ga...
In this paper we present the use of an ultra-high resolution (20 MHz) spectrometer to measure the ga...
In this paper we present the use of an ultra-high resolution (20 MHz) spectrometer to measure the ga...
The design and fabrication of 1550 nm semiconductor optical amplifiers (SOAs) and the characteristic...
The unamplified spontaneous emission spectrum emitted under high injection conditions provides a val...