Add to ORKGRaman scattering measurements have been carried out on ferromagnetic semiconductor Ga1-xMnxN prepared by Mn-ion implantation and post annealing. The Raman results obtained from the annealed and un-annealed Ga1-xMnxN demonstrate that crystalline quality has been improved in Ga1-xMnxN after annealing. Some new vibrational modes in addition to GaN-like modes are found in the Raman spectra measured from the Ga1-xMnxN where the GaN-like modes are found to be shifted in the higher frequency side than those measured from the bulk GaN. A new vibrational mode observed is assigned to MnN-like mode. Other new phonon modes observed are assigned to disorder-activated modes and Mn-related vibrational modes caused by Mn-ion implantation and post-annealing...
A Raman-active vibration mode at 418 cm(-1) is observed in wurtzite gallium nitride (GaN) nanowires ...
We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, gr...
GaN, AIN and AIGaN are very promising materials for high-power, high-temperature and high-frequency ...
Raman scattering measurements have been carried out on ferromagnetic semiconductor Ga1-xMnxN prepare...
Raman scattering measurements have been performed in diluted magnetic semiconductor Ga1-xMnxAs prepa...
The Raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconduc...
In this letter, Raman spectra for a series of (Ga, Mn)N samples with different Mn concentration grow...
The effect of manganese on the vibrational properties of Ga(1-x)Mn(x)N (0 <= x <= 0.18) films has be...
The structural and vibrational properties of nanocrystalline Ga1-xMnxN films deposited by reactive m...
The Raman scattering spectra of MBE-grown GaNAs epilayers were investigated. The resonant enhancemen...
We report on local vibrational modes (LVMs) in highly Mg-doped GaN grown by molecular beam epitaxy. ...
N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700 - 900 degreesC. Com...
N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700 - 900 degreesC. Com...
Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lo...
Raman scattering (RS) experiments have been performed for simultaneous determination of Mn compositi...
A Raman-active vibration mode at 418 cm(-1) is observed in wurtzite gallium nitride (GaN) nanowires ...
We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, gr...
GaN, AIN and AIGaN are very promising materials for high-power, high-temperature and high-frequency ...
Raman scattering measurements have been carried out on ferromagnetic semiconductor Ga1-xMnxN prepare...
Raman scattering measurements have been performed in diluted magnetic semiconductor Ga1-xMnxAs prepa...
The Raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconduc...
In this letter, Raman spectra for a series of (Ga, Mn)N samples with different Mn concentration grow...
The effect of manganese on the vibrational properties of Ga(1-x)Mn(x)N (0 <= x <= 0.18) films has be...
The structural and vibrational properties of nanocrystalline Ga1-xMnxN films deposited by reactive m...
The Raman scattering spectra of MBE-grown GaNAs epilayers were investigated. The resonant enhancemen...
We report on local vibrational modes (LVMs) in highly Mg-doped GaN grown by molecular beam epitaxy. ...
N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700 - 900 degreesC. Com...
N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700 - 900 degreesC. Com...
Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lo...
Raman scattering (RS) experiments have been performed for simultaneous determination of Mn compositi...
A Raman-active vibration mode at 418 cm(-1) is observed in wurtzite gallium nitride (GaN) nanowires ...
We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, gr...
GaN, AIN and AIGaN are very promising materials for high-power, high-temperature and high-frequency ...