Add to ORKGA behavior model of a photo-diode is presented. The model describes the relationship between photocurrent and incident optical power, and it also illustrates the impact of the reverse bias to the variation of the junction capacitance. With this model, the photo-diode and a CMOS receiver circuit were simulated and designed simultaneously under a universal circuit simulation environment
A precise model library based on an equivalent circuit is presented and discussed. The model fully d...
In this project a PC program is written to model the characteristics of the power diode under variou...
A silicon light emitting device is designed and simulated. It is fabricated in 0.6μm standard CMOS t...
Abstract: Based upon the quasi-equilibrium approximation, the validity of p-n junction modelling, ha...
[[abstract]]In this paper, a novel photodiode model that better describes the electro optical behavi...
The properties of various photo-diodes available from a standard CMOS technology have been studied. ...
In this paper, a variability Design of Experiment (DoE) is performed on a radiation-hard photodiode ...
The objectives of this research is to designed and simulated CMOS photodiodes models using VHOL-AMS ...
This paper describes the electrical and spectral characteristics of different layers to construct ph...
A numerical model for the solution of semiconductor-device equations in the presence of an optical-g...
The CMOS photodiode is the primary photosensing device used in solid-state image sensors. A review o...
The objectives of this research is to designed and simulated CMOS photodiodes models usingVHOL-AMS w...
Silicon Photomultipliers (SiPMs) are photo-electronic devices able to detect single photons and perm...
Photocurrent generated by ionizing radiation represents a threat to microelectronics in radiation en...
设计了与标准CMOS工艺兼容的硅双光电探测器,并从理论上计算和分析了其绝对光谱响应。0.5μm CMOS工艺条件数值模拟结果显示,在无抗反射膜情况下该探测器在400~900 nm波长范围内响应度都在0...
A precise model library based on an equivalent circuit is presented and discussed. The model fully d...
In this project a PC program is written to model the characteristics of the power diode under variou...
A silicon light emitting device is designed and simulated. It is fabricated in 0.6μm standard CMOS t...
Abstract: Based upon the quasi-equilibrium approximation, the validity of p-n junction modelling, ha...
[[abstract]]In this paper, a novel photodiode model that better describes the electro optical behavi...
The properties of various photo-diodes available from a standard CMOS technology have been studied. ...
In this paper, a variability Design of Experiment (DoE) is performed on a radiation-hard photodiode ...
The objectives of this research is to designed and simulated CMOS photodiodes models using VHOL-AMS ...
This paper describes the electrical and spectral characteristics of different layers to construct ph...
A numerical model for the solution of semiconductor-device equations in the presence of an optical-g...
The CMOS photodiode is the primary photosensing device used in solid-state image sensors. A review o...
The objectives of this research is to designed and simulated CMOS photodiodes models usingVHOL-AMS w...
Silicon Photomultipliers (SiPMs) are photo-electronic devices able to detect single photons and perm...
Photocurrent generated by ionizing radiation represents a threat to microelectronics in radiation en...
设计了与标准CMOS工艺兼容的硅双光电探测器,并从理论上计算和分析了其绝对光谱响应。0.5μm CMOS工艺条件数值模拟结果显示,在无抗反射膜情况下该探测器在400~900 nm波长范围内响应度都在0...
A precise model library based on an equivalent circuit is presented and discussed. The model fully d...
In this project a PC program is written to model the characteristics of the power diode under variou...
A silicon light emitting device is designed and simulated. It is fabricated in 0.6μm standard CMOS t...
