Add to ORKGHorizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4H-SiC epilayers. Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates purchased from Cree is performed at a typical temperature of 1500 degrees C with a pressure of 40 Torr by using SiH4+C2H4+H-2 gas system. The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope, atomic force microscopy (AFM), x-ray diffraction, Raman scattering, and low temperature photoluminescence (LTPL). The background doping of 32 pm-thick sample has been reduced to 2-5 x 10(15) cm(-3). The FWHM of the rocking curve is 9-16 arcsec. Intentional N-doped and B-doped 4H-...
High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reacto...
The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C...
The homoepitaxial growth of 4H-SiC films was conducted on 4H-SiC 150 mm 4° off-axis substrates by us...
Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get highly qualiti...
Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a h...
4H-SiC layers have been homoepitaxially grown at 1500 degrees C with the use of a horizontal hot-wal...
The quality of the N-doped 4H-SiC homoepitaxial layers grown via hot-wall horizontal chemical vapor ...
International audience4H-SiC epilayers have been achieved by cold wall CVD in the silane-propane sys...
High quality, homoepitaxial layers of4H-SiC were grown on off-oriented4H-SiC(0001) Si planes in a ve...
Abstract. A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor ...
Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001) substrates was performed by using the s...
In situ H2 etching and homoepitaxial growth of 4H-SiC have been carried out on 4 ◦ off-axis Si-face ...
This dissertation research focused on the growth of 4H-SiC epitaxial layers in low-pressure horizont...
Silicon carbide (SiC) has shown significant promise for a wide range of electronic device applicatio...
Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for elect...
High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reacto...
The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C...
The homoepitaxial growth of 4H-SiC films was conducted on 4H-SiC 150 mm 4° off-axis substrates by us...
Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get highly qualiti...
Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a h...
4H-SiC layers have been homoepitaxially grown at 1500 degrees C with the use of a horizontal hot-wal...
The quality of the N-doped 4H-SiC homoepitaxial layers grown via hot-wall horizontal chemical vapor ...
International audience4H-SiC epilayers have been achieved by cold wall CVD in the silane-propane sys...
High quality, homoepitaxial layers of4H-SiC were grown on off-oriented4H-SiC(0001) Si planes in a ve...
Abstract. A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor ...
Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001) substrates was performed by using the s...
In situ H2 etching and homoepitaxial growth of 4H-SiC have been carried out on 4 ◦ off-axis Si-face ...
This dissertation research focused on the growth of 4H-SiC epitaxial layers in low-pressure horizont...
Silicon carbide (SiC) has shown significant promise for a wide range of electronic device applicatio...
Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for elect...
High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reacto...
The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C...
The homoepitaxial growth of 4H-SiC films was conducted on 4H-SiC 150 mm 4° off-axis substrates by us...