The subbands of the ground state E-c1, the first excited state E-c2 and heavy hole state E-HH1 are calculated by solving the eigenvalues of effective-mass Hamiltonian H-0 which is derived from eight-band k . p theory and the calculations are performed at k(x) = k, = k = 0 for the three-dimensional array of InGaAs/GaAs quantum dots (QDs). With indium content in InGaAs QDs gradually increasing from 30% to 100%,the intersubband transition wavelength of E-c2 to E-c1, blue-shifts from 18.50 to 11.87 mu m,while the transition wavelength of E-c1, to E-HH1, red-shifts from 1. 04 to 1. 73 mu m. With the sizes of Ir-0.5 Ga-0.5 As and InAs QDs increasing from 1.0 to 5.0 nm, the intersubband transition from E-c1, to E-C2 transforms from bound-state-to-...
The objective of the present work is to study the growth of self-organized In(Ga,Al)As/GaAs quantum ...
Energy levels of InAs/GaAs self-assembled quantum dot (QD) system were analyzed by capacitance-volta...
The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are ca...
A thorough investigation of the energy level structure in a quantum-dots-in-a-well infrared photodet...
A thorough investigation of quantum-dots-in-a-well structures for infrared photodetector application...
Quantum dot (QD) structure has potential applications in modern highly efficient optoelectronic devi...
Different energy levels are generally assumed to be associated with ground state (GS) and excited st...
We present a systematic investigation of calculating quantum dots (QDs) energy levels using finite e...
This work is an investigation into the electronic behaviour of semiconductor quantum dots, particula...
The electronic structures in the hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots are inve...
Quantum dots (QDs) represent the ultimate limit in charge carrier confine-ment with discrete atomic-...
Abstract: Atomistic electronic structure calculations are performed to study the coherent inter-dot ...
Semiconductor quantum dots (QDs) have unique atom-like properties. In this work, the electronic stat...
We present a theoretical study of the electronic and optical properties of InGaAsN∕GaAs quantum dot ...
The theoretical analysis of intersubband optical transitions for InAs/ InGaAs quantum dots-in-a-well...
The objective of the present work is to study the growth of self-organized In(Ga,Al)As/GaAs quantum ...
Energy levels of InAs/GaAs self-assembled quantum dot (QD) system were analyzed by capacitance-volta...
The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are ca...
A thorough investigation of the energy level structure in a quantum-dots-in-a-well infrared photodet...
A thorough investigation of quantum-dots-in-a-well structures for infrared photodetector application...
Quantum dot (QD) structure has potential applications in modern highly efficient optoelectronic devi...
Different energy levels are generally assumed to be associated with ground state (GS) and excited st...
We present a systematic investigation of calculating quantum dots (QDs) energy levels using finite e...
This work is an investigation into the electronic behaviour of semiconductor quantum dots, particula...
The electronic structures in the hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots are inve...
Quantum dots (QDs) represent the ultimate limit in charge carrier confine-ment with discrete atomic-...
Abstract: Atomistic electronic structure calculations are performed to study the coherent inter-dot ...
Semiconductor quantum dots (QDs) have unique atom-like properties. In this work, the electronic stat...
We present a theoretical study of the electronic and optical properties of InGaAsN∕GaAs quantum dot ...
The theoretical analysis of intersubband optical transitions for InAs/ InGaAs quantum dots-in-a-well...
The objective of the present work is to study the growth of self-organized In(Ga,Al)As/GaAs quantum ...
Energy levels of InAs/GaAs self-assembled quantum dot (QD) system were analyzed by capacitance-volta...
The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are ca...