Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of the samples, which were all n-type, did not change significantly after the diffusion doping. X-ray diffraction measurements revealed no secondary phase in the samples. Experiments using superconducting quantum interference device (SQUID) showed that the samples were ferromagnetic at 5 and 300 K, implying the Curie temperature to be around or over 300 K, despite their n-type conductivity. (c) 2004 Elsevier B.V. All rights reserved
A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequent an...
The ferromagnetic and electrical characteristics of in situ Mn-doped GaN nanowires fabricated in the...
We have performed an in situ depth profile study of Mn-doped GaN prepared by a low temperature therm...
Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of t...
Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of t...
n-type GaN films grown on sapphire by MOCVD were doped with Mn and Cr by solid state diffusion and c...
n-type GaN films grown on sapphire by MOCVD were doped with Mn and Cr by solid state diffusion and c...
We report room temperature ferromagnetism in crystalline GaCrN prepared by Cr deposition and drive-i...
3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4...
3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4...
Wurtzite GaN:Mn films with an extremely high Curie temperature of around 940 K and Mn concentration ...
A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization meas...
Electronic structure, energy bands, and magnetic properties of Cr-doped GaN have been calculated fro...
Electronic structure, energy bands, and magnetic properties of Cr-doped GaN have been calculated fro...
A GaN film doped with 8.2% Mn was grown by the molecular-beam-epitaxy technique. Magnetization measu...
A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequent an...
The ferromagnetic and electrical characteristics of in situ Mn-doped GaN nanowires fabricated in the...
We have performed an in situ depth profile study of Mn-doped GaN prepared by a low temperature therm...
Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of t...
Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of t...
n-type GaN films grown on sapphire by MOCVD were doped with Mn and Cr by solid state diffusion and c...
n-type GaN films grown on sapphire by MOCVD were doped with Mn and Cr by solid state diffusion and c...
We report room temperature ferromagnetism in crystalline GaCrN prepared by Cr deposition and drive-i...
3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4...
3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4...
Wurtzite GaN:Mn films with an extremely high Curie temperature of around 940 K and Mn concentration ...
A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization meas...
Electronic structure, energy bands, and magnetic properties of Cr-doped GaN have been calculated fro...
Electronic structure, energy bands, and magnetic properties of Cr-doped GaN have been calculated fro...
A GaN film doped with 8.2% Mn was grown by the molecular-beam-epitaxy technique. Magnetization measu...
A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequent an...
The ferromagnetic and electrical characteristics of in situ Mn-doped GaN nanowires fabricated in the...
We have performed an in situ depth profile study of Mn-doped GaN prepared by a low temperature therm...