We report on a new simple route to realize a high resolution nanograting. By adopting an InAlGaAs matrix and strain-compensated technique, we have proved that a uniform self-assembled InAs nanowire array can be fabricated by molecular beam epitaxy (MBE). A nanograting woven by self-assembled semiconductor nanowires shows a conspicuous diffraction feature. The good agreement between the theoretical and experimental values of diffraction peak positions indicates that a uniform nanowire array is a promising nanograting. This simple one-step MBE growth method will open exciting opportunities for the field of clever optics design
One of the main features of any lithography technique is its resolution, generally maximized for a s...
We review the unique self-organizing growth mechanisms on planar and patterned high-index semiconduc...
We demonstrate the use of nanoimprint lithography to define arrays of vertical InP nanowires. Each n...
none4The superior chemical and physical properties of natural surfaces are frequently related to the...
The superior chemical and physical properties of natural surfaces are frequently related to the mult...
Nanowires are important candidates for use in future electronics, photonics and thermoelectrics appl...
Vertically aligned group IV semiconductor nanowires are great interest of research recently because ...
We report self-induced growth of vertically aligned (i.e. along the [ 111] direction), free-st...
We describe a general method for producing ultrahigh-density arrays of aligned metal and semiconduct...
We describe a general method for producing ultrahigh-density arrays of aligned metal and semiconduct...
We review three novel techniques whereby the highly uniform two-dimensional films produced by molecu...
Abstract: In this talk I will give examples of the rapid development in the areas of growth, process...
Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/I...
Semiconductor nanowires are nanometre-sized structures offering a wealth of unique and novel propert...
Vertically aligned, catalyst-free semiconducting nanowires hold great potential for photovoltaic app...
One of the main features of any lithography technique is its resolution, generally maximized for a s...
We review the unique self-organizing growth mechanisms on planar and patterned high-index semiconduc...
We demonstrate the use of nanoimprint lithography to define arrays of vertical InP nanowires. Each n...
none4The superior chemical and physical properties of natural surfaces are frequently related to the...
The superior chemical and physical properties of natural surfaces are frequently related to the mult...
Nanowires are important candidates for use in future electronics, photonics and thermoelectrics appl...
Vertically aligned group IV semiconductor nanowires are great interest of research recently because ...
We report self-induced growth of vertically aligned (i.e. along the [ 111] direction), free-st...
We describe a general method for producing ultrahigh-density arrays of aligned metal and semiconduct...
We describe a general method for producing ultrahigh-density arrays of aligned metal and semiconduct...
We review three novel techniques whereby the highly uniform two-dimensional films produced by molecu...
Abstract: In this talk I will give examples of the rapid development in the areas of growth, process...
Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/I...
Semiconductor nanowires are nanometre-sized structures offering a wealth of unique and novel propert...
Vertically aligned, catalyst-free semiconducting nanowires hold great potential for photovoltaic app...
One of the main features of any lithography technique is its resolution, generally maximized for a s...
We review the unique self-organizing growth mechanisms on planar and patterned high-index semiconduc...
We demonstrate the use of nanoimprint lithography to define arrays of vertical InP nanowires. Each n...