Add to ORKGInAs self-organized nanostructures in In0.52Al0.48As matrix have been grown on InP (001) substrates by molecular beam epitaxy. The morphologies of the nanostructures are found to be strongly dependent on the growth rate of the InAs layer. By increasing the growth rate from 0.005 to 0.35 ML/s, the morphology of the nanostructure changes from wire to elongated dot and then changes back to wire again. Polarized photoluminescence of the InAs quantum wires and quantum dots are performed at 77 K, which are characterized by strong optical anisotropies. (C) 2003 Elsevier B.V. All rights reserved
High-density InAs nanowires embedded in an In0.25Al0.48As matrix are fabricated in situ by molecular...
InAs self-organized quantum dots in InAlAs matrix lattice-matched to exactly oriented (001) InP subs...
The 6-period stacked layers of self-assembled InAs quasi-quantum wires(qQWRs) and quantum dots(QDs) ...
We report the influence of the matrix in InAs nanostructures grown on InP[001] substrates by solid s...
We report the influence of the matrix in InAs nanostructures grown on InP[001] substrates by solid s...
Self-assembled InAs nanostructures on (0 0 1) InP substrate have been grown by molecular beam epitax...
The authors report the self-organized growth of InAs/InAlAs quantum wires on nominal (001) InP subst...
We have studied the influence of matrix materials on the self-organization of InAs nanostructures gr...
The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular b...
The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular b...
Thickness effect of immiscible alloy InAlAs as matrix layer on the morphology of InAs nanostructure ...
High-density InAs nanowires embedded in an In0.52Al0.48As matrix are fabricated in situ by molecular...
Strained InAs nanostructures have been grown by solid-source molecular beam epitaxy in In0.52Al0.48A...
The effects of InP substrate orientations on self-assembled InAs quantum dots (QDs) have been invest...
InAs self-organized nanostructures were grown with variant deposition thickness and growth rate on c...
High-density InAs nanowires embedded in an In0.25Al0.48As matrix are fabricated in situ by molecular...
InAs self-organized quantum dots in InAlAs matrix lattice-matched to exactly oriented (001) InP subs...
The 6-period stacked layers of self-assembled InAs quasi-quantum wires(qQWRs) and quantum dots(QDs) ...
We report the influence of the matrix in InAs nanostructures grown on InP[001] substrates by solid s...
We report the influence of the matrix in InAs nanostructures grown on InP[001] substrates by solid s...
Self-assembled InAs nanostructures on (0 0 1) InP substrate have been grown by molecular beam epitax...
The authors report the self-organized growth of InAs/InAlAs quantum wires on nominal (001) InP subst...
We have studied the influence of matrix materials on the self-organization of InAs nanostructures gr...
The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular b...
The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular b...
Thickness effect of immiscible alloy InAlAs as matrix layer on the morphology of InAs nanostructure ...
High-density InAs nanowires embedded in an In0.52Al0.48As matrix are fabricated in situ by molecular...
Strained InAs nanostructures have been grown by solid-source molecular beam epitaxy in In0.52Al0.48A...
The effects of InP substrate orientations on self-assembled InAs quantum dots (QDs) have been invest...
InAs self-organized nanostructures were grown with variant deposition thickness and growth rate on c...
High-density InAs nanowires embedded in an In0.25Al0.48As matrix are fabricated in situ by molecular...
InAs self-organized quantum dots in InAlAs matrix lattice-matched to exactly oriented (001) InP subs...
The 6-period stacked layers of self-assembled InAs quasi-quantum wires(qQWRs) and quantum dots(QDs) ...