Topics
GaAsChemical substance
We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of AlSb layers are found to be 450 degrees C and 2.1 nm, respectively. A rms surface roughness of 0.67 nm over 10 x 10 mu m(2) is achieved as a 0.5 mu m GaSb film is grown under optimized conditions
Using transmission electron microscopy we investigate the influence of AlSb monolayers and substrate...
International audienceThe preparation of GaSb(100) surfaces by ultraviolet (UV) irradiation, prior t...
Sensing systems for mid-infrared wavelengths (2 to 5 µm) have important applications in biomedical, ...
GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) ...
GaSb 1 mu m-thick layers were grown by molecular beam epitaxy on GaAs (001). The effects of the grow...
We present a simple thermal treatment with the antimony source for the metal–organic chemical vapor ...
The direct growth of GaSb buffer layers on Si substrates is attracting considerable interest in the ...
We have investigated the structural and the optical properties of GaSb films with a thin AlSb buffer...
A method for the growth of high quality GaSb epilayer on GaAs (001) substrate is demonstrated in thi...
Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been gr...
Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorpo...
Thin InAs layers and membranes are fabricated on GaAs substrates using GaSb buffer layers grown by M...
The crystal quality and structural properties of GaSb thin films grown on a semi-insulator GaAs (001...
We report on the characterization of GaSb layers grown on silicon substrates using an AlSb nucleatio...
International audienceAntiphase boundaries free GaSb epitaxial layers with low surface roughness (< ...
Using transmission electron microscopy we investigate the influence of AlSb monolayers and substrate...
International audienceThe preparation of GaSb(100) surfaces by ultraviolet (UV) irradiation, prior t...
Sensing systems for mid-infrared wavelengths (2 to 5 µm) have important applications in biomedical, ...
GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) ...
GaSb 1 mu m-thick layers were grown by molecular beam epitaxy on GaAs (001). The effects of the grow...
We present a simple thermal treatment with the antimony source for the metal–organic chemical vapor ...
The direct growth of GaSb buffer layers on Si substrates is attracting considerable interest in the ...
We have investigated the structural and the optical properties of GaSb films with a thin AlSb buffer...
A method for the growth of high quality GaSb epilayer on GaAs (001) substrate is demonstrated in thi...
Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been gr...
Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorpo...
Thin InAs layers and membranes are fabricated on GaAs substrates using GaSb buffer layers grown by M...
The crystal quality and structural properties of GaSb thin films grown on a semi-insulator GaAs (001...
We report on the characterization of GaSb layers grown on silicon substrates using an AlSb nucleatio...
International audienceAntiphase boundaries free GaSb epitaxial layers with low surface roughness (< ...
Using transmission electron microscopy we investigate the influence of AlSb monolayers and substrate...
International audienceThe preparation of GaSb(100) surfaces by ultraviolet (UV) irradiation, prior t...
Sensing systems for mid-infrared wavelengths (2 to 5 µm) have important applications in biomedical, ...
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