X-ray photoelectron spectroscopy has been used to measure the valence band offset at the ZnO/GaAs heterojunction interface. The valence band offset is determined to be 2.39 +/- 0.23 eV. As a consequence, a type-II heterojunction with a conduction band offset of -0.44 +/- 0.23 eV is found. The directly obtained value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. (c) 2008 American Institute of Physics
The valence-band offset of the wurtzite ZnO/rutile TiO(2) heterojunction was directly determined by ...
The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemiss...
Abstract The energy band alignment of ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunction was ch...
X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the ZnO/S...
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 ...
The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemiss...
The valence band offset (VBO) of the wurtzite InN/ZnO heterojunction is directly determined by x-ray...
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The valence band offset (VBO) of the InN/GaAs heterojunction is directly determined by x-ray photoel...
Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Ref...
The valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions ...
International audienceWe present a combined experimental and theoretical approach for the determinat...
Thin SiO2 interlayer is the key to improving the electroluminescence characteristics of light emitti...
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 ...
The Al:ZnO/Cu2SnS3 semiconductor heterojunction was fabricated. The structural and optical propertie...
The valence-band offset of the wurtzite ZnO/rutile TiO(2) heterojunction was directly determined by ...
The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemiss...
Abstract The energy band alignment of ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunction was ch...
X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the ZnO/S...
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 ...
The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemiss...
The valence band offset (VBO) of the wurtzite InN/ZnO heterojunction is directly determined by x-ray...
The valence band offset (VBO) of the wurtzite ZnO/4H-SiC heterojunction is directly determined to be...
The valence band offset (VBO) of the InN/GaAs heterojunction is directly determined by x-ray photoel...
Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Ref...
The valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions ...
International audienceWe present a combined experimental and theoretical approach for the determinat...
Thin SiO2 interlayer is the key to improving the electroluminescence characteristics of light emitti...
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 ...
The Al:ZnO/Cu2SnS3 semiconductor heterojunction was fabricated. The structural and optical propertie...
The valence-band offset of the wurtzite ZnO/rutile TiO(2) heterojunction was directly determined by ...
The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemiss...
Abstract The energy band alignment of ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunction was ch...