Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes

High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Adolfsson, Göran
Wang, Shumin
Sadeghi, Mahdad
Larsson, Anders

January 2007

High-quality 1.2 µm InGaAs/GaAs single and triple quantum well lasers grown by molecular beam epitax...

High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Adolfsson, G\uf6ran
Wang, Shu Min
Sadeghi, Mahdad
Larsson, Anders

January 2007

High-quality 1.2 \ub5m InGaAs/GaAs single and triple quantum well lasers grown by molecular beam epi...

High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

Tappura, K.
Aarik, J.
Pessa, M.

January 1996

AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all ...

Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy

Wang HL
Wu DH
Wu BP
Ni HQ
Huang SS
Xiong YH
Wang PF
Han Q
Niu ZC
Tangring I
Wang SM
Wang HL Chinese Acad Sci Inst Semicond State Key Lab Superlattice & Microstruct Beijing 10008 Peoples R China. E-mail Address: hlwang_19841220@163.com

January 2009

We report a 1.5-mu m InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs ...

Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy

Tangring, I (Tangring, I.)
Wang, SM (Wang, S. M.)
Sadeghi, M (Sadeghi, M.)
Larsson, A (Larsson, A.)
Wang, XD (Wang, X. D.)
Tangring, I, Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden. 电子邮箱地址: ivar.tangring@mc2.chalmers.se

January 2007

We demonstrate 1.25-1.29 mu m metamorphic laser diodes grown on GaAs by molecular beam epitaxy (MBE)...

1.53\ub5m GaInNAsSb laser diodes grown on GaAs(100)

Gupta, J. A.
Barrios, P. J.
Zhang, X.
Pakulski, G.
Wu, X.

January 2005

GaInNAsSb/GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavele...

20 Gbit/s modulation of 1.55 mu m compressively strained InGaAs/InAlGaAs/InP multiple quantum well ridge laser diodes grown by solid source molecular beam epitaxy

Kiefer, R.
Lösch, R.
Walcher, H.
Walther, M.
Weisser, S.
Czotscher, K.
Benz, W.
Rosenzweig, J.
Herres, N.
Maier, M.
Manz, C.
Pletschen, W.
Braunstein, J.
Weimann, G.

January 1998

We describe the realization of 1.55 mu m InGaAs/InAlGaAs MQW ridge waveguide laser diodes with InP c...

Metamorphic growth of 1.25 – 1.29 \ub5m InGaAs quantum well lasers by molecular beam epitaxy

T\ue5ngring, Ivar
Wang, Shu Min
Lai, Zonghe
Sadeghi, Mahdad
Larsson, Anders

January 2007

We demonstrate 1.25–1.29 μm metamorphic laser diodes grown on GaAs by molecular beam epitaxy (MBE) u...

1.58 mu m InGaAs quantum well laser on GaAs

Tangring, I
Ni, HQ
Wu, BP
Wu, DH
Xiong, YH
Huang, SS
Niu, ZC
Wang, SM
Lai, ZH
Larsson, A
Tangring, I, Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden. 电子邮箱地址: ivar.tangring@mc2.chalmers.se

January 2007

We demonstrate the 1.58 mu m emission at room temperature from a metamorphic In0.6Ga0.4As quantum we...

1.58 µm InGaAs quantum well laser on GaAs

Tångring, Ivar
Wang, Shumin
Larsson, Anders
Lai, Zonghe
Ni, H. Q.
Wu, B.P.
Wu, D.H.
Xiong, Y.H.
Huang, S.S.
Niu, Z.C.

January 2007

We demonstrate the 1.58 µm emission at room temperature from a metamorphic In0.6Ga0.4As quantum wel...

Very Low Threshold Current Density 1.292 µm GaInNAs Triple Quantum Well Lasers

Zhao, Huan
Adolfsson, Göran
Wang, Shumin
Sadeghi, Mahdad
Larsson, Anders

January 2008

Very-low-threshold Ga0.62In0.38N 0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers e...

Low threshold current strained InGaAs/AlGaAs quantum well lasers

Eng, Lars E.

January 1993

NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in ...

1.58 \ub5m InGaAs quantum well laser on GaAs

T\ue5ngring, Ivar
Wang, Shu Min
Larsson, Anders
Lai, Zonghe
Ni, H. Q.
Wu, B.P.
Wu, D.H.
Xiong, Y.H.
Huang, S.S.
Niu, Z.C.

January 2007

We demonstrate the 1.58 \ub5m emission at room temperature from a metamorphic In0.6Ga0.4As quantum ...

Very Low Threshold Current Density 1.292 \ub5m GaInNAs Triple Quantum Well Lasers

Zhao Terneh\ue4ll, Huan
Adolfsson, G\uf6ran
Wang, Shu Min
Sadeghi, Mahdad
Larsson, Anders

January 2008

Very-low-threshold Ga0.62In0.38N 0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers e...

Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs

T\ue5ngring, Ivar
Wang, Shu Min
Larsson, Anders
Ni, H. Q.
Wu, B. P.
Wu, D. H.
Xiong, Y. H.
Huang, S. S.
Niu, Zhichuan

January 2008

We demonstrate how MBE growth parameters can be optimized to produce a metamorphic InGaAs QW laser e...

High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Adolfsson, Göran
Wang, Shumin
Sadeghi, Mahdad
Larsson, Anders

January 2007

High-quality 1.2 µm InGaAs/GaAs single and triple quantum well lasers grown by molecular beam epitax...

High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Adolfsson, G\uf6ran
Wang, Shu Min
Sadeghi, Mahdad
Larsson, Anders

January 2007

High-quality 1.2 \ub5m InGaAs/GaAs single and triple quantum well lasers grown by molecular beam epi...

High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

Tappura, K.
Aarik, J.
Pessa, M.

January 1996

AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all ...

Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy

Wang HL
Wu DH
Wu BP
Ni HQ
Huang SS
Xiong YH
Wang PF
Han Q
Niu ZC
Tangring I
Wang SM
Wang HL Chinese Acad Sci Inst Semicond State Key Lab Superlattice & Microstruct Beijing 10008 Peoples R China. E-mail Address: hlwang_19841220@163.com

January 2009

We report a 1.5-mu m InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs ...

Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy

Tangring, I (Tangring, I.)
Wang, SM (Wang, S. M.)
Sadeghi, M (Sadeghi, M.)
Larsson, A (Larsson, A.)
Wang, XD (Wang, X. D.)
Tangring, I, Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden. 电子邮箱地址: ivar.tangring@mc2.chalmers.se

January 2007

We demonstrate 1.25-1.29 mu m metamorphic laser diodes grown on GaAs by molecular beam epitaxy (MBE)...

1.53\ub5m GaInNAsSb laser diodes grown on GaAs(100)

Gupta, J. A.
Barrios, P. J.
Zhang, X.
Pakulski, G.
Wu, X.

January 2005

GaInNAsSb/GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavele...

20 Gbit/s modulation of 1.55 mu m compressively strained InGaAs/InAlGaAs/InP multiple quantum well ridge laser diodes grown by solid source molecular beam epitaxy

Kiefer, R.
Lösch, R.
Walcher, H.
Walther, M.
Weisser, S.
Czotscher, K.
Benz, W.
Rosenzweig, J.
Herres, N.
Maier, M.
Manz, C.
Pletschen, W.
Braunstein, J.
Weimann, G.

January 1998

We describe the realization of 1.55 mu m InGaAs/InAlGaAs MQW ridge waveguide laser diodes with InP c...

Metamorphic growth of 1.25 – 1.29 \ub5m InGaAs quantum well lasers by molecular beam epitaxy

T\ue5ngring, Ivar
Wang, Shu Min
Lai, Zonghe
Sadeghi, Mahdad
Larsson, Anders

January 2007

We demonstrate 1.25–1.29 μm metamorphic laser diodes grown on GaAs by molecular beam epitaxy (MBE) u...

1.58 mu m InGaAs quantum well laser on GaAs

Tangring, I
Ni, HQ
Wu, BP
Wu, DH
Xiong, YH
Huang, SS
Niu, ZC
Wang, SM
Lai, ZH
Larsson, A
Tangring, I, Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden. 电子邮箱地址: ivar.tangring@mc2.chalmers.se

January 2007

We demonstrate the 1.58 mu m emission at room temperature from a metamorphic In0.6Ga0.4As quantum we...

1.58 µm InGaAs quantum well laser on GaAs

Tångring, Ivar
Wang, Shumin
Larsson, Anders
Lai, Zonghe
Ni, H. Q.
Wu, B.P.
Wu, D.H.
Xiong, Y.H.
Huang, S.S.
Niu, Z.C.

January 2007

We demonstrate the 1.58 µm emission at room temperature from a metamorphic In0.6Ga0.4As quantum wel...

Very Low Threshold Current Density 1.292 µm GaInNAs Triple Quantum Well Lasers

Zhao, Huan
Adolfsson, Göran
Wang, Shumin
Sadeghi, Mahdad
Larsson, Anders

January 2008

Very-low-threshold Ga0.62In0.38N 0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers e...

Low threshold current strained InGaAs/AlGaAs quantum well lasers

Eng, Lars E.

January 1993

NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in ...

1.58 \ub5m InGaAs quantum well laser on GaAs

T\ue5ngring, Ivar
Wang, Shu Min
Larsson, Anders
Lai, Zonghe
Ni, H. Q.
Wu, B.P.
Wu, D.H.
Xiong, Y.H.
Huang, S.S.
Niu, Z.C.

January 2007

We demonstrate the 1.58 \ub5m emission at room temperature from a metamorphic In0.6Ga0.4As quantum ...

Very Low Threshold Current Density 1.292 \ub5m GaInNAs Triple Quantum Well Lasers

Zhao Terneh\ue4ll, Huan
Adolfsson, G\uf6ran
Wang, Shu Min
Sadeghi, Mahdad
Larsson, Anders

January 2008

Very-low-threshold Ga0.62In0.38N 0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers e...

Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs

T\ue5ngring, Ivar
Wang, Shu Min
Larsson, Anders
Ni, H. Q.
Wu, B. P.
Wu, D. H.
Xiong, Y. H.
Huang, S. S.
Niu, Zhichuan

January 2008

We demonstrate how MBE growth parameters can be optimized to produce a metamorphic InGaAs QW laser e...

High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Adolfsson, Göran
Wang, Shumin
Sadeghi, Mahdad
Larsson, Anders

January 2007

High-quality 1.2 µm InGaAs/GaAs single and triple quantum well lasers grown by molecular beam epitax...

High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Adolfsson, G\uf6ran
Wang, Shu Min
Sadeghi, Mahdad
Larsson, Anders

January 2007

High-quality 1.2 \ub5m InGaAs/GaAs single and triple quantum well lasers grown by molecular beam epi...

High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

Tappura, K.
Aarik, J.
Pessa, M.

January 1996

AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all ...

Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes

Abstract

Extracted data

Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes

Abstract

Extracted data

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