The electronic structure and optical gain of wurtzite ZnO nanowires are investigated in the framework of effective-mass envelope-function theory. We found that as the elliptical aspect ratio e increases to be larger than a critical value, the hole ground states may change from optically dark to optically bright. The optical gain of ZnO nanowires increases as the hole density increases. For elliptical wire with large e, the y-polarized mode gain can be several thousand cm(-1), while the x-poiarized mode gain may be 26 times smaller than the former, so they can be used as ultraviolet linearly polarized lasers. (C) 2008 American Institute of Physics
The present paper reviews the growth mechanism, processes and optical properties of nanowires with s...
ZnO nanowires are promising building blocks for optoelectronic applications. Lasers andlight-emittin...
The emission spectrum of individual single crystalline ZnO nanowires shows three regimes characteriz...
The electronic structure and optical properties of ZnO wurtzite quantum wires with radius R >= 3 nm ...
The electronic structure and optical properties of ZnO wurtzite quantum wires with radius R≥3 nm are...
The electronic structure and optical properties of ZnO wurtzite quantum wires with radius R≥3 nm are...
Zinc oxide (ZnO) nanowires are widely studied for use in ultraviolet optoelectronic devices, such as...
Zinc oxide (ZnO) nanowires are widely studied for use in ultraviolet optoelectronic devices, such as...
Zinc oxide (ZnO) nanowires are widely studied for use in ultraviolet optoelectronic devices, such as...
Zinc oxide (ZnO) nanowires are widely studied for use in ultraviolet optoelectronic devices, such as...
The geometric, energetic, electronic structures and optical properties of ZnO nanowires (NWs) with h...
Wide band gap semiconductor nanostructures with near-cylindrical geometry and large dielectric const...
The emission spectrum of individual high-quality ZnO nanowires consists of a series of Fabry−Pérot-...
Single crystal ZnO nanowires are synthesized and configured as field-effect transistors. Photolumine...
Single crystal ZnO nanowires are synthesized and configured as field-effect transistors. Photolumine...
The present paper reviews the growth mechanism, processes and optical properties of nanowires with s...
ZnO nanowires are promising building blocks for optoelectronic applications. Lasers andlight-emittin...
The emission spectrum of individual single crystalline ZnO nanowires shows three regimes characteriz...
The electronic structure and optical properties of ZnO wurtzite quantum wires with radius R >= 3 nm ...
The electronic structure and optical properties of ZnO wurtzite quantum wires with radius R≥3 nm are...
The electronic structure and optical properties of ZnO wurtzite quantum wires with radius R≥3 nm are...
Zinc oxide (ZnO) nanowires are widely studied for use in ultraviolet optoelectronic devices, such as...
Zinc oxide (ZnO) nanowires are widely studied for use in ultraviolet optoelectronic devices, such as...
Zinc oxide (ZnO) nanowires are widely studied for use in ultraviolet optoelectronic devices, such as...
Zinc oxide (ZnO) nanowires are widely studied for use in ultraviolet optoelectronic devices, such as...
The geometric, energetic, electronic structures and optical properties of ZnO nanowires (NWs) with h...
Wide band gap semiconductor nanostructures with near-cylindrical geometry and large dielectric const...
The emission spectrum of individual high-quality ZnO nanowires consists of a series of Fabry−Pérot-...
Single crystal ZnO nanowires are synthesized and configured as field-effect transistors. Photolumine...
Single crystal ZnO nanowires are synthesized and configured as field-effect transistors. Photolumine...
The present paper reviews the growth mechanism, processes and optical properties of nanowires with s...
ZnO nanowires are promising building blocks for optoelectronic applications. Lasers andlight-emittin...
The emission spectrum of individual single crystalline ZnO nanowires shows three regimes characteriz...